Skip to main content Accessibility help
×
Home
Hostname: page-component-7ccbd9845f-hl5gf Total loading time: 0.941 Render date: 2023-02-01T03:36:54.671Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true

Control of Point Defects in Semiconductors

Published online by Cambridge University Press:  16 February 2011

Yuri Y. Loginov
Affiliation:
Department of Physics, Krasnoyarsk University, Svobodnii Prospect 79, 660062Russia;
Paul D. Brown
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
Colin J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
Get access

Abstract

The prospects for localised point defect control within II-VI compound semiconductors are considered with reference to doping, thermal annealing, electron and ion beam irradiation and localised strain. Interstitials and vacancies generated within electron beam irradiated II-VI compounds interact and coalesce in a TEM foil to form voids decorated by metallic precipitates and the processes of CdTe chemical decomposition are examined. Ion beam and electron beam irradiated material show clear differences in behaviour following annealing of doped and un-doped CdTe. Controlled directional climb of dislocations within electron beam irradiated ZnSe is demonstrated. In view of the differential diffusion of interstitials and vacancies, the prospect of localised semiconductor type conversion is considered.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Loginov, Y.Y., Brown, P.D., Thompson, N. and Durose, K., J. Crystal Growth 117, 682 (1991).CrossRefGoogle Scholar
[2] Loginov, Y.Y. and Brown, P.D., phys. stat. sol. (a) 132, 323 (1992).CrossRefGoogle Scholar
[3] Brown, P.D., Bithell, E.G., Humphreys, C.J., Skevington, P.J., Perrin, S.D. and Davies, G.J., Inst. Phys. Conf. Ser. 134493 (1993)Google Scholar
[4] Varley, J.H.O., J. NucI. Energy 1, 130 (1954).Google Scholar
[5] Lunn, M.A. and Dobson, P.S., J. Crystal Growth 73379 (1985)Google Scholar
[6] Loginov, Y.Y., Brown, P.D., Thompson, N., G.J. Russell and Woods, J., Inst. Phys. Conf. Ser. 100433 (1989)Google Scholar
[7] Loginov, Y.Y., Brown, P.D., Thompson, N., G.J. Russell and Woods, J., J. Crystal Growth 102, 827 (1990).CrossRefGoogle Scholar
[8] Loginov, Y.Y., Brown, P.D., Thompson, N., Alnajjar, A.A., Brinkman, A.W. and Woods, J., J. Crystal Growth 117259(1991)Google Scholar
[9] Selected powder diffraction data for metals and alloys, Data book V1,2, Swarthmore, Pensylvania USA, JCPDS, (1978).Google Scholar
[10] Lu, P. and Smith, D.J., phys. stat. sol. (a) 107 681(1988)CrossRefGoogle Scholar
[11] Thangaraj, N and Wessels, B.W, J. Appl. Phys. 67, 1535 (1990).CrossRefGoogle Scholar
[12] Brown, P.D., Kirkland, A. and Humphreys, C.J., Inst. Phys. Conf. Ser. 138. 209 (1993)Google Scholar
[13] Schubert, EF, Pfeiffer, Loren, West, KW, Luftman, HS and Zydzik, GJ, Appl. Phys. Lett 64 2238(1994)CrossRefGoogle Scholar
[14] Panin, G.N., Inst. Phys. Conf. Ser No. 134, 743 (1993).Google Scholar
[15] Barbot, J.F., Kronewitz, J. and Schroter, W., Appl. Phys. Lett. 57743 (1990)Google Scholar
[16] Chen, G.S., Boothrotd, C.B. and Humphreys, C.J., Inst. Phys. Conf. Ser. No. 134503 (1993)Google Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Control of Point Defects in Semiconductors
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Control of Point Defects in Semiconductors
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Control of Point Defects in Semiconductors
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *