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IRAS Analysis of the Early Stage of Thermal Oxidation on a SiC Surface

Published online by Cambridge University Press:  21 March 2011

Tamotsu Jikimoto ,
Hidekazu Tsuchida ,
Isaho Kamata  and
Kunikazu Izumi
Tamotsu Jikimoto
Affiliation:
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan.
Hidekazu Tsuchida
Affiliation:
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan.
Isaho Kamata
Affiliation:
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan.
Kunikazu Izumi
Affiliation:
Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan.
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Abstract

The structure of thermal oxide film thinner than 2nm on a SiC surface was investigated using in-situ infrared reflection absorption spectroscopy (IRAS). In the case of oxide films on 6H-SiC(0001), the peak frequencies of the TO mode (≈1050 cm−1) of the Si-O-Si stretch vibration shifts toward lower wave number with decreasing oxide thickness in the range of 0.2nm to 2nm and shift toward a higher frequency as the growth temperature rises. The LO mode (≈1250 cm−1) of the Si-O-Si stretch vibration remains almost constant with the increase in oxide thickness from 0.2 nm to 2 nm. These results indicate that there is a considerable difference in the structure near the interface between a thermally grown oxide layer formed on SiC and one formed on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.44
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] S., Nakashima, H., Matsunami, S., Yoshida, and H., Harima (Eds.), Inst. Phys. Conf. Ser., 142, 725, (1996)Google Scholar
[2] Hornetz, B., Michel, H.-J., and Halbritter, J., J. Mater. Res, 9, 3088, (1994)Google Scholar
[3] Basseler, M., Pensl, G., and Afanas'ev, V. V., Diamond Relat. Mater., 6, 1472 (1997)Google Scholar
[4] Afanas'ev, V. V., Stesmans, A., and Harri, C. I., Mater. Sci. Foru., 264–268, 857 (1998)Google Scholar
[5] Wahab, Q., Hultman, L., Willander, M., and Sundgren, J. –E., J. Electron. Mater. 24, 1345 (1995)Google Scholar
[6] Fitch, J. T., Lucovsky, G., Kobeda, E., and Irene, E.A., J. Vac. Sci. Technol., B7, 153 (1989)Google Scholar
[7] Ishikawa, K., Ogawa, H., Oshida, S., Suzuki, K., and Fujiwara, S., Ext. Abst. Intern. Conf Solid State Dev. Mater. 500, (Osaka, 1995)Google Scholar
[8] Miyazaki, S., Nishimura, H., Fukuda, M., Ley, L., and Ristein, J., Appl. Surf. Sci., 113/114, 585, (1997)Google Scholar
[9] Ono, H., Ikarashi, T., Ando, K., and Kitano, T., J. Appl. Phys. 84, 6064 (1998)Google Scholar