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Solid-Phase Epitaxial Regrowth of Ion-Implanted Silicon onSapphire Using Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

A M Hodge ,
A G Cullis  and
N G Chew
A M Hodge
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK
A G Cullis
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK
N G Chew
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs. WR14 3PS, UK
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Abstract

Solid phase epitaxial regrowth of silicon on sapphire is used to improve thequality of as-received silicon films prior to conventional deviceprocessing. It has been shown that this is necessary, especially for layersof 0.3μm and thinner, if the full potential of this particular silicon oninsulator technology is to be realised. Si+ ions are implanted atan energy and dose such that all but the surface of the silicon film isrendered amorphous. In this study, the layer is regrown using a rapidthermal annealer operated in the multi-second regime. A second shallowerimplant followed by rapid thermal annealing produces a further improvement.Characterisation of the material has been principally by cross-sectionaltransmission electron microscopy. The structures observed after differentimplant and regrowth treatments are discussed.

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References

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