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Adatom Diffusion on Strained Si(001)-(2×1) Surface

Published online by Cambridge University Press:  11 February 2011

Antti Kuronen ,
Krister Henriksson  and
Kimmo Kaski
Antti Kuronen
Affiliation:
Helsinki University of Technology, Laboratory of Computational Engineering P.O.Box 9400, FIN-02015 HUT, FINLAND
Krister Henriksson
Affiliation:
Helsinki University of Technology, Laboratory of Computational Engineering P.O.Box 9400, FIN-02015 HUT, FINLAND
Kimmo Kaski
Affiliation:
Helsinki University of Technology, Laboratory of Computational Engineering P.O.Box 9400, FIN-02015 HUT, FINLAND
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Abstract

The effects of a buried germanium island inside silicon substrate on the silicon adatom diffusion on the substrate surface have been studied by kinetic Monte Carlo simulations. The confinement of adatoms caused by the strain field of the germanium island can clearly be seen. Moreover, due to the anisotropy in adatom diffusion the confinement in directions parallel and perpendicular to the dimer rows of the surface take place in different temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W13.1
Copyright
Copyright © Materials Research Society 2003

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References

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