Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-23T18:31:07.518Z Has data issue: false hasContentIssue false
  • English
  • Français

Advanced Properties of Silicon Oxynitride (SiOxNy) Thin Films Prepared by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 February 2011

R.-F. Xiao ,
L.C. Ng  and
H.B. Liao
R.-F. Xiao
Affiliation:
Department of Physics, the Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong
L.C. Ng
Affiliation:
Department of Physics, the Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong
H.B. Liao
Affiliation:
Department of Physics, the Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong
Get access

Abstract

A pulsed laser deposition technique has been used to grow silicon oxynitride (SiOxNy) thin films at low deposition temperatures (25°C - 300°C). the thin films were found to be quite smooth in surface morphology, extremely inert in chemical solution and highly transparent in the optical range of 0.3 μm to 5 μm. the refractive index was tunable between 1.4 - 2.1 by the addition of oxygen in substitution of nitrogen in the film, and the dielectric constant is much larger than the similar films grown by conventional chemical vapor deposition. the high quality of the SiOxNy films deposited at such low temperatures was resulted from the large kinetic energy carried by the impinging particles created by the ablation of a high-power pulsed excimer laser. the kinetic energy of the impinged particles on the substrate provides thermal energy for surface diffusion and relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 115
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Mclarty, P.K., Hill, W.L., Xu, X.-L., Misra, V., Wortman, J.J., and Harris, G.S., Appl. Phys. Lett. 63, 3619 (1993).Google Scholar
2 Hwang, H., Ting, W., Maiti, B., Kwong, D.-L., and Lee, J., Appl. Phys. Lett. 57, 1010 (1990).Google Scholar
3 Kapoor, V. J., and Bailey, R. S., J. Electrochem. Soc.,137 (1990) 3589; D. Xu, and V.J. Kapoor, J. Appl. Phys. 70, 1570 (1991); N. Novkovski, I. Aizenberg, E. Goin, E. Fullin, and M. Dutoit, Apppl. Phys. Lett. 54, 2408 (1989); Y. Okada, P.J. Tobin, R.I. Heyde, J. Liao, and P. Rushbrook, Appl. Phys. Lett. 61, 3163 (1992).Google Scholar
4 Chovelon, J.M., Jafrezic-Renault, N., Clechet, P., Cross, Y., Fombon, J.J., Baraton, M.I., Quintard, P., Sensors and actuators B4, 385 (1991).Google Scholar
5 Kanata, T., Takakura, H., and Hamakawa, Y., Appl. Phys. a 49, 305 (1989); G.A. Niklasson, T.S. Eriksson, and K. Brantervik, Appl. Phys. Lett. 54, 965 (1989).Google Scholar
6 Xiao, R.-F., Ng, L.C., Jiang, C., Yang, Z.Y., and G.Wong, K.L., Thin Solid Films, in press.Google Scholar
7 Pulsed Laser Deposition of Thin Films, edited by Chrisey, D.B., and Hubler, G.K. (John Wiley & Sons, New York, 1994).Google Scholar
8 Fogarassy, E., Fuchs, C., Slaoui, A., De Unamuno, S., Stoquert, J.-P., Marine, W., and Lang, B., SPIE Vol. 2045, 148 (1994), and References therein.Google Scholar
9 Xiao, R.-F., and Ming, N.B., Phys. Rev. E 49, 4720 (1994); R.-F. Xiao, J.I.D. Alexander, and F. Rosenberger, Phys. Rev. A43, 2977 (1991).Google Scholar
10 Wolf, S., and Tauber, R.N., Silicon Processing for the VLSI Era, Vol.1- Process Technology (Lattice Press, 1986), pp. 191–195.Google Scholar
11 Handbook of infrared Optical Materials, edited by Klocek, P. (Marcel Dekker, New York, 1991), pp. 346–352.Google Scholar