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AlGaAs Surface Reconstruction after Cl2 Chemical Etch and Ultra High Vacuum Anneal

Published online by Cambridge University Press:  22 February 2011

M. Hong ,
J. P. Mannaerts ,
L. H. Grober ,
F. A. Thiel  and
R. S. Freund
M. Hong
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. P. Mannaerts
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
L. H. Grober
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
F. A. Thiel
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. S. Freund
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We report attaining (3x2) surface reconstruction with streaky reflection high energy electron diffraction (RHEED) patterns on Al0.4Ga0.6As after in-situ Cl2 chemical etch and ultra high vacuum (UHV) anneal. Secondary ion-mass spectrometry (SIMS) analysis at the regrown/etched Al0.4Ga0.6 As interface reveals impurities of O and C in the level of (5±1) × 1012 cm-2 and (3±1) × 1012 cm-2, respectively. These impurity levels are 10 times less than those of Al0.4Ga0.6 As after in-situ electron cyclotron resonance (ECR) plasma etch and UHV anneal without Cl2 chemical etch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 213
Copyright
Copyright © Materials Research Society 1994

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References

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