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Alkoxide Doping of GaAs During Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  22 February 2011

Y. Park ,
M. Skowronski  and
T. M. Rosseel
Y. Park
Affiliation:
Department of Materials Science and Eng., Carnegie Mellon University, Pittsburgh, PA 15213
M. Skowronski
Affiliation:
Department of Materials Science and Eng., Carnegie Mellon University, Pittsburgh, PA 15213
T. M. Rosseel
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Doping of GaAs with dimethylaluminum methoxide and its effects have been studied during metalorganic vapor phase epitaxy. Oxygen concentration decreases exponentially with increasing growth temperature and the activation energy equal to 1.8 eV.Increase of oxygen content with decrease of V/III ratio indicates that oxygen most likely occupies arsenic site. Photoluminescence intensity was observed to decrease with increasing oxygen contentand three new deep level luminescence peaks appeared at 75, 96, and 160 meV below the band gap. This, together with the fact that as-grown layers are fully depleted, indicates that oxygen is electrically active in OMVPE GaAs and forms deep non-radiative recombinationcenters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 75
Copyright
Copyright © Materials Research Society 1993

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References

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