Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-24T04:24:38.324Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of Alternating Current Conduction and Impedance Spectroscopy Study of BaBi2Nb2O9 Thin Films

Published online by Cambridge University Press:  17 March 2011

Apurba Laha ,
S. Saha  and
S. B. Krupanidhi
Apurba Laha
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore -560 012, INDIA
S. Saha
Affiliation:
Materials Science Division Argonne National Laboratory, 9700, S. Cass Avenue, Argonne, IL-60439, USA
S. B. Krupanidhi
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore -560 012, INDIA
Get access

Abstract

Alternating current conduction in BaBi2Nb2O9 (BBN) thin films has been studied over a wide range of temperatures and frequencies. A power law relation was used to explain the frequency dependence of ac conductivity. In the higher frequency region, ac conductivity of the BBN thin films was temperature independent. The activation energy calculated from the Arrhenius plot of ac conductivity was found to be around 0.25 eV. It was attributed to shallow trap controlled space charge conduction in the bulk of the sample. The impedance analysis of the BBN thin films was also performed to gain insight into the microstructure of the films, including the characteristics of the grains, grain boundaries, and film-electrode interface. The response of a single RC combination has been observed for our case. The effect of other components, such as the grain boundary interface and electrode/film interface was negligible. The imaginary component of impedance (Z”) exhibited different peak maxima at different temperatures. A Debye mechanism was found to be appropriate to explain the polarization relaxation in BBN thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C7.21.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Araujo, C. A. Paz. de, Cuchiaro, J. D., Scott, M. C., McMillan, L. D., and Scott, J. F., Nature (London) 374 627 (1995).Google Scholar
2. Auciello, O., Scott, J. F. and Ramesh, R., Physics Today, 22 (1998).Google Scholar
3. Otsuki, T. and Arita, K., Integr. Ferroelectr., 17, 31 (1997).Google Scholar
4. Song, T. K., Lee, J. -K., and Jung, H. J., Appl. Phys. Lett., 69, 3839 (1996).Google Scholar
5. Bhattacharyya, S., Bharadwaja, S., and Krupanidhi, S. B.. Appl. Phys. Lett. 75, 2656 (1999)Google Scholar
6. Desu, S. B. and Li, T., Mat. Sci. Eng.,B34, L4 (1995).Google Scholar
7. Lu, C. H. and Wen, C. Y., J. Appl. Phys. 86, 6335 (1999).Google Scholar
8. Laha, A. and Krupanidhi, S. B., Appl. Phys. Lett. 77, 3818 (2000).Google Scholar
9. Hu, H. and Krupanidhi, S. B., J. Mater. Res. 9, 1484 (1994).Google Scholar
10. Yoo, I. K. and Desu, S. B., Intgr. Ferroelectr. 3, 365 (1993)Google Scholar
11. Mihara, T., Yoshimori, H., Watanabe, H., and Araujo, C. A. P. de, Jpn. J. Appl. Phys., 34, 5233 (1995).Google Scholar
12. Smolenskii, G. A. Isupov, V. A., and Agranovskaya, A., Sov. Sol. State, 3, 651 (1961).Google Scholar
13. Thorton, J. A., Annu. Rev. Mater. Sci. 7,239 (1997).Google Scholar
14. Hippel, V., Brockenridge, Chelsey and , Tisza, Ind. and Eng. Chem. 38, 1097 (1946).Google Scholar
15. Jonscher, A. K., Dielectric relaxation in solids, Chelsea Dielectrics Press, London.Google Scholar
16. Laha, A. and Krupanidhi, S. B., Communicated to J. Appl. Phys. 2001.Google Scholar
17. Sinclair, D. C. and West, A. R., J. Appl. Phys. 66 (6), 3850 (1989).Google Scholar