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Argon incorporation on silicon carbide thin films deposited by bias co-sputtering technique

Published online by Cambridge University Press:  13 June 2012

H. S. Medeiros ,
R. S. Pessoa ,
M. A. Fraga ,
L. V. Santos ,
H. S. Maciel ,
M. Massi  and
A. S. da Silva Sobrinho
H. S. Medeiros
Affiliation:
Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil.
R. S. Pessoa
Affiliation:
Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil. IP&D, University of Vale do Paraíba, 12244-000, S. J. dos Campos, SP, Brazil.
M. A. Fraga
Affiliation:
Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil. Institute for Advanced Studies, Department of Aerospace Science and Technology, 12228-001, S. J. dos Campos, Brazil.
L. V. Santos
Affiliation:
Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil. IP&D, University of Vale do Paraíba, 12244-000, S. J. dos Campos, SP, Brazil.
H. S. Maciel
Affiliation:
Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil. IP&D, University of Vale do Paraíba, 12244-000, S. J. dos Campos, SP, Brazil.
M. Massi
Affiliation:
Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil.
A. S. da Silva Sobrinho
Affiliation:
Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil.
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Abstract

The influence of negative substrate bias on the chemical, electrical and mechanical properties of silicon carbide (SiC) thin films deposited onto (100) silicon substrate by dc magnetron cosputtering without external substrate heating is reported. These studies were performed by using the following techniques: Rutherford backscattering spectroscopy (RBS), profilometry, Raman spectroscopy, four-point probe method and nanoindentation. The results indicate that there is a good correlation between the substrate bias voltage and the argon incorporation into SiC film, namely, the SiC films deposited under substrate bias of –200 V and –300 V have higher argon content and higher elastic modulus and hardness than those deposited at 0 V. An opposite behavior was found for electrical resistivity: the SiC deposited at –300 V has resistivity of 0.45 Ω.cm whereas the deposited at 0 V has 7.0 Ω.cm.

Keywords

thin filmsputteringRutherford backscattering (RBS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h04-10
Copyright
Copyright © Materials Research Society 2012

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References

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