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Au/Ge/Pd Ohmic Contacts to n-TYPE InP

Published online by Cambridge University Press:  25 February 2011

Ping Jian ,
Douglas G. Ivey ,
Robert Bruce  and
Gordon Knight
Ping Jian
Affiliation:
Department of Mining, Metallurgical and Petroleum Engineering, University of Alberta, Edmonton, Alberta, Canada, T6G 2G6
Douglas G. Ivey
Affiliation:
Department of Mining, Metallurgical and Petroleum Engineering, University of Alberta, Edmonton, Alberta, Canada, T6G 2G6
Robert Bruce
Affiliation:
Bell Northern Research, Ltd., P. O. Box 3511, Station C, Ottawa, Ontario, Canada, KIY 4H7
Gordon Knight
Affiliation:
Bell Northern Research, Ltd., P. O. Box 3511, Station C, Ottawa, Ontario, Canada, KIY 4H7
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Abstract

Ohmic contact formation and thermal stability in a Au/Ge/Pd metallization to n-type InP, doped to a level of 1017 cm-3, have been investigated. Contact resistance was measured using a transmission line method, while microstructural changes were examined by means of TEM, EDX, CBED and SAD. Contacts became ohmic after annealing at temperatures ranging from 300°C to 375°C. A minimum contact resistance of 2.5×l0-6 Ω-cm2 was obtained after annealing at 350°C for 320s. The drop in resistance to ohmic behavior corresponded to the decomposition of an epitaxial quaternary phase (Au-Ge-Pd-P). Annealing at 400°C and above resulted in Au10In3 spiking into InP and a break down of contact lateral uniformity, which increased contact resistance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 531
Copyright
Copyright © Materials Research Society 1992

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References

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