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Bending of Nanoscale Thin Si Film Induced by Growth of Ge Islands: Hut vs. Dome

  • Minghuang Huang (a1), Martin Cuma (a1), M. G. Lagally (a2) and Feng Liu (a1)
Abstract

We perform atomistic simulations to compute bending of freestanding nanoscale thin Si film induced by strained Ge islands. We show that a larger Ge dome island can induce smaller bending than a smaller hut island and explain the surprising experimental observation for growth of Ge islands on patterned silicon-on-insulator substrate (SOI) with Si template layer thinned down to nanometer scale. This counterintuitive bending behavior is caused by strain sharing between the film and the ultra thin substrate.

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[2] Medeiros-Ribeiro, G., Bratkovski, A.M., Kamins, T.I., Ohlberg, D.A.A. and Williams, R.S., Science 279, 353 (1998).
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[4] Floro, J.A., Chason, E., Twesten, R.D., Hwang, R.Q. and Freund, L.B., Phys. Rev. Lett. 79, 3946 (1997).
[5] Huang, M.H., Liu, Feng, Rugheimer, P., and Lagally, M. G., to be published.
[6] Liu, Feng, Huang, M.H., Rugheimer, P., Savage, D. E. and Lagally, M. G., Phys. Rev. Lett. 89, 136101 (2002).
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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