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Bonding of Cu wires by solid state sintering of Ag nanoparticles at low temperatures

Published online by Cambridge University Press:  31 January 2011

Hani Alarifi
Affiliation:
halarifi@uwaterloo.ca, University of Waterloo, Waterloo, Canada
Anming Hu
Affiliation:
a2hu@uwaterloo.ca, University of Waterloo, Waterloo, Canada
Mustafa Yavuz
Affiliation:
myavuz@uwaterloo.ca, University of Waterloo, waterloo, Canada
Y. Zhou
Affiliation:
nzhou@mecheng1.uwaterloo.ca, University of Waterloo, Waterloo, Canada
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Abstract

Solid state sintering of Ag nanoparticles was used to bond Cu wires to Cu foils at temperatures less than 250°C. The Ag nanoparticles are coated with an organic shell to prevent sintering at room temperature. After annealing the nanoparticles at 200°C, the decomposition of the organic shell was confirmed using TGA and Raman spectroscopy. The joint strength was measured by tensile shear tests, which shows that the joint strength increases as the bonding temperature increases. Metallic bond between Ag nanoparticles and Cu was achieved with no contamination. Bonds formed by our method, was confirmed to withstand temperatures higher than the bonding temperatures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

References:

1 Ide, E., Angata, A., Hirose, A., K.F.Kobayashi, Acta Mater. 53, 2385 (2005).Google Scholar
2 Akeda, Y., Tatsumi, H., Yamaguchi, T., Hirose, A., Morita, T., and Ide, E., Mater. Trans. 49, 1537 (2008).Google Scholar
3 Ide, E., Angata, S., Hirose, A., Kobayashi, K.F., Mater. Sci. Forum 512, 383 (2006).Google Scholar
4 Morita, T., Ide, E., Yasuda, Y., Hirose, A., and Kobayashi, K., Jpn. J. Appl. Phys. 47, 6615 (2008)Google Scholar
5 Tatsumi, H., Akada, Y., Yamaguchi, T., and Hirose, A., Adv. Mater. Res. 26-28, 499 (2007).Google Scholar
6 Morita, T., Yasuda, Y., Ide, E., Akada, Y., and Hirose, A., Mater. Trans. 49, 2875 (2008).Google Scholar
7 Moon, K., Dong, H., Maric, R., Pothukuchi, S., Hunt, A., Li, Y., and Wong, C.P., J. Electron. Mater. 34, 168 (2005).Google Scholar
8 Wakuda, D., Hatamura, M., Suganuma, K., Chem. Phys. Lett. 441, 305 (2007)Google Scholar
9 Wakuda, D., Kim, K., and Suganuma, K., IEEE Trans. Compon. Packag. Technol. 32. 627 (2009).Google Scholar
10 Yeadon, M., J.Yang, Averback, R., J.Bullard, Gibson, J., Nanostruct. Mater. 10, 731 (1998).Google Scholar
11 Deegan, R., Phys. Rev. E 61, 475 (2000).Google Scholar
12 Ding, L., Davidchack, R., Pan, J., Comput. Mater. Sci. 45, 247 (2009)Google Scholar