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A Boron Doped Amorphous Silicon Thin-Film Bolometer for Long Wavelength Detection

Published online by Cambridge University Press:  11 February 2011

A. Heredia-J ,
A. Torres-J ,
A. Jaramillo-N ,
F.J. De la Hidalga-W  and
M. Landa-V.
A. Heredia-J
Affiliation:
Optics and Electronics Departments, Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE
A. Torres-J
Affiliation:
Optics and Electronics Departments, Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE
A. Jaramillo-N
Affiliation:
Luis E. Erro No. 1, C.P. 72840, Tonantzintla, Puebla, Mexico. aheredia@susu.inaoep.mx
F.J. De la Hidalga-W
Affiliation:
Luis E. Erro No. 1, C.P. 72840, Tonantzintla, Puebla, Mexico. aheredia@susu.inaoep.mx
M. Landa-V.
Affiliation:
Luis E. Erro No. 1, C.P. 72840, Tonantzintla, Puebla, Mexico. aheredia@susu.inaoep.mx
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Abstract

The fabrication of a bolometer for infrared detection using a boron doped amorphous silicon (a-Si-B:H) thin film is presented for the first time. This thin film (170 nm) was deposited on a silicon nitride membrane sustained by a frame made of micromachined crystalline silicon in order to improve the thermal isolation. Electrical connectivity to the element was achieved by means of aluminum contact pads. The resultant figures of merit, measured at room temperature, were: electrical conductivity of 1.513×10-3 (Ω-cm)-1, thermal coefficient of resistance of 3.4 %K-1, and the device is sensitive to temperature variations as small as 20 mK.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.26
Copyright
Copyright © Materials Research Society 2003

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References

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