Skip to main content Accessibility help
×
×
Home

Bridgman Growth and Characterization of Bulk Single Crystals of Ga1−xInxSb for Thermophotovoltaic Applications

  • J. R. Boyer (a1) and W. T. Haines (a1)

Abstract

Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances in low bandgap (0.5–0.7 eV) III-V semiconductors. The use of mixed pseudo-binary compounds allows for the tailoring of the lattice parameter and the bandgap of the material. Conventional deposition techniques (i.e., epitaxy) for producing such ternary or quaternary materials are typically slow and expensive. Production of bulk single crystals of ternary materials, for example Gal-xlnxSb, is expected to dramatically reduce such material costs. Bulk single crystals of Ga1−xInxSb have been prepared using a Bridgman technique in a two-zone furnace. These crystals are 19 mm in diameter by approximately 50 mm long and were produced using seeds of the same diameter. The effects of growth rate and starting materials on the composition and quality of these crystals will be discussed and compared with other attempts to produce single crystals of this material.

Copyright

References

Hide All
1. The Second NREL Conference on Thermophotovoltaic Generation of Electricity, edited by Benner, J., Coutts, T., and Ginley, D. (Am. Inst. Phys. Proc. 358, Woodbury, NY, 1996).
2. Vul', A. Ya. and Goldberg, Yu. A. in Handbook Series on Semiconductor Parameters. Vol.1, edited by Levinshtein, M., Rumyantsev, S., and Shur, M. (World Scientific, Singapore, 1996), p. 125 and 191–192.
3. Tanaka, A., Watanabe, A., Kimura, M., and Sukegawa, T., J. Crystal Growth 135, p. 269 (1994).
4. Hamaker, R. and White, W., J. Electrochem. Soc. 116, p. 478 (1969).
5. Ivanov-Omskii, V. and Kolomiets, B., J. Soy. Phys. Solid State 1, p 834 (1959).
6. Yee, J., Lin, M., Sarmi, K., and Wilcox, W., J. Crystal Growth 30, p. 185 (1975).
7. Bachmann, K., Thiel, T., Schreiber, H., and Rubin, J., J. Electronic Mat. 9, p. 445 (1980).
8. Pfann, W., Zone Melting, 2nd Ed., John Wiley & Sons, Inc., New York, 1966, p. 11.
9. Dutta, P., Bhat, H., and Kumar, V., J. Appl. Phys. 81, p. 5821 (1997).
10. Ashley, T., Beswick, J.A., Cockayne, B., and Elliott, C.T., 7th Int. Conf. on Narrow Gap Semicond., edited by Reno, J. L. (Inst. Phys. Conf. Ser. No. 144, Bristol, 1995).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed