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CBE Growth Characterization of GaAs and InGaAs by Rheed and RD

Published online by Cambridge University Press:  22 February 2011

G. Paulsson ,
B. Junno  and
L. Samuelson
G. Paulsson
Affiliation:
Department of Solid State Physics, Lund University, P. O.Box 118, S-221 00 Lund, Sweden
B. Junno
Affiliation:
Department of Solid State Physics, Lund University, P. O.Box 118, S-221 00 Lund, Sweden
L. Samuelson
Affiliation:
Department of Solid State Physics, Lund University, P. O.Box 118, S-221 00 Lund, Sweden
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Abstract

Triethylgallium, trimethylindium and tertiarybutylarsine have been used to grow GaAs and InGaAs on (OO1)GaAs. No pre-cracking was used so that the thermal decomposition of tertiarybutylarsine on GaAs could be studied. The growth has been monitored in-situ using reflection high-energy electron diffraction and reflectance-difference. A comparison ismade between the reflectance difference signal and the intensity of the reflection high-energy electron diffraction specular spot as the surface is transformed from As rich to Garich. Using the former technique similar growth transients have also been studied as a function of the temperature. It is found that the incorporation of small amounts of In (less than 5 per cent) in the buffer layer significantly improves the oscillatory behavior of the RD-signal when growth of GaAs is commenced. Finally, the growth dynamics of InGaAs isstudied using reflection high-energy electron diffraction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 21
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Samuelson, L., Junno, B., Paulsson, G., Fornell, J. O. and Ledebo, L., J. Crystal Growth 00JCG0169F (1992)Google Scholar
2. Paulsson, G., Deppert, K., Jeppesen, S., Jonsson, J., Samuelson, L. and Schmidt, P., J. Crystal Growth 105, 312 (1990)Google Scholar
3. Aspnes, D. E., Harbison, J. P., Studna, A. A., Florez, L. T., Appl. Phys. Lett. 52, 957 (1988)Google Scholar
4. Chang, Yia-Chung and Aspnes, D. E., Phys. Rev. B41 12 002 (1990)Google Scholar
5. Orr, B. G., to be published in J. Crystal GrowthGoogle Scholar
6. Berger, P. R., Chang, K., Bhattacharya, P. K. and Singh, J., J. Vac. Sci. Technol. B5 1987, 1162 Google Scholar