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CBE Growth of InP with Triethylindium and Metalorganic Phosphorous Precursors: Bisphosphinoethane and Tertiarybutyl-Phosphine

Published online by Cambridge University Press:  22 February 2011

Albert Chin ,
Steve Hersee ,
Paul Martin ,
John Mazurowski ,
James Ballingall ,
J. A. Glass Jr  and
James T. Spencer
Albert Chin
Affiliation:
General Electric Electronics Laboratory, Syracuse, NY Presently at National Chiao Tung University, Taiwan, ROC
Steve Hersee
Affiliation:
General Electric Electronics Laboratory, Syracuse, NY Presently at University of Mexico, Albuquerque, NM
Paul Martin
Affiliation:
General Electric Electronics Laboratory, Syracuse, NY
John Mazurowski
Affiliation:
General Electric Electronics Laboratory, Syracuse, NY
James Ballingall
Affiliation:
General Electric Electronics Laboratory, Syracuse, NY
J. A. Glass Jr
Affiliation:
Dept. of Chemistry and the Center for Molecular Electronics, Syracuse University, NY
James T. Spencer
Affiliation:
Dept. of Chemistry and the Center for Molecular Electronics, Syracuse University, NY
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Abstract

Two metallorganic phosphorous precursors, bisphosphinoethane (BPE) and tertiarybutyl phosphine (TBP), were studied. For indium phosphide (InP) grown using BPE, the measured room temperature and 77K Hall mobilities were 4,200 and 22,000 cm2/Vs, with carrierdensities 5.7E15 and 4.0E15 cm−3, respectively. For InP grown using TBP, the measured room temperature and 77K Hall mobilities were 4,400 and 26,000 cm2/Vs, with carrier densities 6.4E15 and 5.1E15 cm−3, respectively. An impurity build-up at the substrate interface is responsible for the relatively low mobility in the adjacent epitaxial layers. SIMS analysis showed that S and Si are the primary impurities measured in films grown with BPE and TBP, respectively; impurity concentrations increasedwith cracking temperature. The full width at half maximum (FWHM) of donor bound exciton peaks measured by 2.2K photoluminescence for InP grown by BPE and TBP were 0.84 and 1.28 meV, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 45
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Panish, M. B. and Temkin, H., Ann. Rev. Mater. Sci. 19, 209 (1989).Google Scholar
2. Tsang, W. T., J Cryst. Growth 105, 1 (1990).Google Scholar
3. Razeghi, M., The MOCVD Challenge, Vol 1, (Adam Hilger Publishers, UK, 1989).Google Scholar
4. Haacke, G., Baur, B., Hoger, R., and Miklis, A., J. Cryst. Growth 105, 143 (1990).Google Scholar
5. Ritter, D., Panish, M. B., Hamm, R. A., Gershoni, D., and Brener, , Appl. Phys. Lett. 56, 1448 (1990).Google Scholar