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Characteristics of 56 Mev Oxygen Implantation into Si and III-V Semiconductors

Published online by Cambridge University Press:  26 February 2011

S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
B. Jalali
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. D. Fox
Affiliation:
Florida State University, Tallahassee, FL 32306
K. W. Kemper
Affiliation:
Florida State University, Tallahassee, FL 32306
C. W. Magee
Affiliation:
Evans East, Inc., Plainsboro, NJ 08836
K. S. Jones
Affiliation:
University of Florida, Gainesville, FL 32611
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Abstract

High energy (56 MeV) oxygen implants into Si, GaAs and InP give rise to sharp, non-Gaussian depth profiles with the distributions skewed towards greater depths. This skewness is probably the result of channeling, and it is a common feature of MeV implants into semiconductors. The ratio of the peak concentration in the depth profile to the concentration at the surface is ≥103 for each material, and the full width at half maximum of each profile is ∼2 μm. The experimental projected ranges for the oxygen are ∼31 μm in GaAs, ∼36 μm in InP and ∼46 μm in Si. These are ∼10% larger than the values predicted by the PRAL code. The photoluminescence intensity from the top 1 μm from the surface of both GaAs and InP is reduced by more than an order of magnitude for 56 MeV oxygen implants at a dose of 1.3 × 1015 cm−2, due to point defect introduction in this region. Potential applications for these high energy implants in electronic and photonic device fabrication will be discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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