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Characterization of GaS-Passivated Quantum-Well Laser Diodes

Published online by Cambridge University Press:  10 February 2011

L. G. Vaughn ,
T. C. Newell ,
L. F. Lester  and
A. N. Macinnes
L. G. Vaughn
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard S. E., Albuquerque, NM 87106
T. C. Newell
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard S. E., Albuquerque, NM 87106
L. F. Lester
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard S. E., Albuquerque, NM 87106
A. N. Macinnes
Affiliation:
TriQuint Semiconductor, 2300 N. E. Brookwood Parkway, Hillsboro, OR 97124
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Abstract

The degradation of AlGaAs/GaAs diode laser performance during operation is typically due to catastrophic optical damage of the facets caused when thermal runaway occurs. These heating effects are due to the presence of non-radiative recombination sites at and near the facets. MOCVD GaS is deposited on the facets of 825-nm ridge waveguide AlGaAs/GaAs quantumwell laser diodes as an electronic passivation to reduce the number of surface states available for non-radiative recombination. For passivated devices, a peak pulsed power nearly double that of unpassivated devices was achieved. The passivated devices also exhibit a longer lifetime before degradation. The impact of the passivation process on other optical characteristics of the laser diodes will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 125
Copyright
Copyright © Materials Research Society 1999

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References

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