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Characterization of Interfacial Roughness in Semiconductor Heterostructures by X-Ray Reflectivity

Published online by Cambridge University Press:  25 February 2011

A. Krol
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
C. J. Sher
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
H. Resat
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
S. C. Woronick
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
W. Ng
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
Y. H. Kao
Affiliation:
Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794
L. L. Chang
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
J. M. Hong
Affiliation:
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

The reflection of monochromatic x-rays by a layered heterostructure can be utilized as a nondestructive probe to obtain information on the interfacial roughness in the material. Interference between x-rays reflected from the top surface and the interfaces can give rise to pronounced oscillations in the reflectivity as a function of the grazing incidence angle. We have made use of this technique to investigate the interfacial roughness in semiconductor heterostructures grown by molecular beam epitaxy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Woronick, S.C., Yang, B.X., Krol, A., Kao, Y.H., Munekata, H., Chang, L.L. and Phillips, J.C., Proc. III International Conf. Modulated Semiconductor Structures, Montpellier, France (1987).Google Scholar
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