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Characterization of Tin Oxide Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  13 March 2014

G. Medina ,
P.A. Stampe ,
R.J. Kennedy ,
R.J. Reeves ,
G.T. Dang ,
A. Hyland ,
M.W. Allen ,
M.J. Wahila ,
L.F.J. Piper  and
S. M. Durbin
G. Medina
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260, USA
P.A. Stampe
Affiliation:
Department of Physics, Florida A&M University, Tallahassee, FL 32307, USA
R.J. Kennedy
Affiliation:
Department of Physics, Florida A&M University, Tallahassee, FL 32307, USA
R.J. Reeves
Affiliation:
Department of Physics, University of Canterbury, Christchurch 8140, New Zealand
G.T. Dang
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand
A. Hyland
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand
M.W. Allen
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand
M.J. Wahila
Affiliation:
Department of Physics, Binghamton University, Binghamton, NY 13902, USA
L.F.J. Piper
Affiliation:
Department of Physics, Binghamton University, Binghamton, NY 13902, USA
S. M. Durbin
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260, USA Department of Physics, University at Buffalo, Buffalo, NY 14260, USA Department of Electrical and Computer Engineering, Western Michigan University, Kalamazoo, MI 49008, USA
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Abstract

We describe the characteristics of a series of thin film tin oxide films grown by plasma-assisted molecular beam epitaxy on r-plane sapphire substrates over a range of flux and substrate temperature conditions. A mixture of both SnO2 and SnO are detected in several films, with the amount depending on growth conditions, most particularly the substrate temperature. Electrical measurements were not possible on all samples due to roughness related issues with contacting, but at least one film exhibited p-type characteristics depending on measurement conditions, and one sample exhibited significant persistent photoconductivity upon ultraviolet excitation in a metal-semiconductor-metal device structure.

Keywords

oxidethin filmmolecular beam epitaxy (MBE)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 13 - 18
Copyright
Copyright © Materials Research Society 2014 

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References

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