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Characterization Study of Al-Plug Technology

Published online by Cambridge University Press:  15 February 2011

H. H. Hoang ,
F. S. Chen ,
T. E. Turner ,
Y. S. Lin ,
G. A. Dixit  and
F. T. Liou
H. H. Hoang
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, M/S 742, Carrollton, TX 75006
F. S. Chen
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, M/S 742, Carrollton, TX 75006
T. E. Turner
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, M/S 742, Carrollton, TX 75006
Y. S. Lin
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, M/S 742, Carrollton, TX 75006
G. A. Dixit
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, M/S 742, Carrollton, TX 75006
F. T. Liou
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, M/S 742, Carrollton, TX 75006
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Abstract

This work investigates the reliability issues associated with an aluminum sputter process, called the Al-plug process, that results in the complete filling of submicron contacts and vias of various sizes. The state-of-the-art Al-plug technology has proven its superiority over conventional processes due to its process simplicity and complete elimination of metal step-coverage problems and dielectric voiding over contacts/vias, resulting in higher reliability. Materials and electrical characterization of this metal process are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 79
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1]. Brown, D.M., et al., Proc. IEDM, 66(1986).Google Scholar
[2]. Lee, V.V., et al., Proc. IEDM, 450(1988).Google Scholar
[3]. Sun, S.P., et al., Proc. VMIC, 49(1990).Google Scholar
[4]. Hoang, H.H., Coy, R.A. and McPherson, J.W., Proc. VMIC, 133(1990).Google Scholar
[5]. Mukai, R., et al., IEEE Electron Dev. Lett., 8, 76(1987).Google Scholar
[6]. Mogami, T., et al., Proc. VMIC, 17(1985).Google Scholar
[7]. Piekaar, H.W., et al., Proc. VMIC, 122(1989).Google Scholar
[8]. Inoue, M., et al,, J. Vac. Sci. Technol.., 6, 1636(1988).Google Scholar
[9]. Ono, H., et al., Proc. VMIC, 76(1990).Google Scholar
[10]. Chen, F.S., et al., Proc. IEDM, 51(1990).Google Scholar
[11]. Pramanik, D. and Saxena, A., Solid State Technology, 3, 73(1990).Google Scholar