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Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As

Published online by Cambridge University Press:  31 January 2011

Roman Engel-Herbert ,
Yoontae Hwang ,
James LeBeau ,
Yan Zheng  and
Susanne Stemmer
Roman Engel-Herbert
Affiliation:
rengelhe@mrl.ucsb.edu, UCSB, Santa Barbara, California, United States
Yoontae Hwang
Affiliation:
ythwang@mrl.ucsb.edu, UCSB, Santa Barbara, California, United States
James LeBeau
Affiliation:
lebeau@mrl.ucsb.edu, UCSB, Santa Barbara, California, United States
Yan Zheng
Affiliation:
yazheng@umail.ucsb.edu, UCSB, Santa Barbara, California, United States
Susanne Stemmer
Affiliation:
stemmer@mrl.ucsb.edu, University of California, Santa Barbara, Materials Department, Santa Barbara, California, 93106-5050, United States
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Abstract

We report on the growth of high-permittivity (k) TiO2 thin films on In0.53Ga0.47As channels by chemical beam deposition with titanium isopropoxide as the source. The films grew in a reaction-limited regime with smooth surfaces. High-resolution transmission electron microscopy showed an atomically abrupt interface with the In0.53Ga0.47As channel that indicated that this interface is thermally stable. Measurements of the leakage currents using metal-oxide-semiconductor capacitors with Pt top electrodes revealed asymmetric characteristics with respect to the bias polarity, suggesting an unfavorable band alignment for CMOS applications. X-ray photoelectron spectroscopy was used to determine the TiO2/In0.53Ga0.47As band offsets. A valence band offset of 2.5 ± 0.1 eV was measured.

Keywords

electrical propertiesIII-Vdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1155: Symposium C – CMOS Gate-Stack Scaling–Materials, Interfaces and Reliability Implications , 2009 , 1155-C13-02
Copyright
Copyright © Materials Research Society 2009

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