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Chemical Mechanical Polishing of Interlevel Dielectrics: Models for Removal Rate and Planarity

Published online by Cambridge University Press:  25 February 2011

S. Sivaram ,
R. Tolles ,
H. Bath ,
E. Lee  and
R. Leggett
S. Sivaram
Affiliation:
SEMATECH Inc., Austin, Texas 78741.
R. Tolles
Affiliation:
SEMATECH Inc., Austin, Texas 78741.
H. Bath
Affiliation:
SEMATECH Inc., Austin, Texas 78741.
E. Lee
Affiliation:
SEMATECH Inc., Austin, Texas 78741.
R. Leggett
Affiliation:
SEMATECH Inc., Austin, Texas 78741.
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Abstract

This paper reviews some of the problems limiting broad manufacturing implementation of chemical mechanical polishing (CMP) as a planarization process for interlevel dielectrics. We examine the mechanism whereby polish rates tend to decrease as the polish pad ages, and propose an explanation based on slurry transport. We review a simple theory which provides an understanding in terms of basic mechanical principles of how CMP produces its planarizing effect. Finally, we demonstrate a method capable of providing a quantitative measure of planarity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 53
Copyright
Copyright © Materials Research Society 1992

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References

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