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Chemical Vapor Deposition of Silicon Films by Pulsed CO2 Laser Irradiaton of Silane

Published online by Cambridge University Press:  21 February 2011

Y. Pauleau ,
R. Stawski ,
Ph. Lami  and
G. Auvert
Y. Pauleau
Affiliation:
Centre National d'Etudes des Té1écommunicationsB.P. 98, 38243 Meylan, France.
R. Stawski
Affiliation:
Centre National d'Etudes des Té1écommunicationsB.P. 98, 38243 Meylan, France.
Ph. Lami
Affiliation:
Centre National d'Etudes des Té1écommunicationsB.P. 98, 38243 Meylan, France.
G. Auvert
Affiliation:
Centre National d'Etudes des Té1écommunicationsB.P. 98, 38243 Meylan, France.
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Abstract

Silane molecules have been irradiated by a pulsed CO2 laser operating at 10.59 μm. The threshold of silicon formation by homogeneous dissociation of silane has been investigated as a function of laser fluence (0.1–3.5 J/cm2) and silane pressure (1–100 Torr). Silicon films have been deposited on quartz substrates using the laser beam either perpendicular or parallel to the substrate surface. The crystallographic structure and deposition rate of these silicon films are found to be dependent on the incident angle of the laser beam, silane pressure, substrate temperature and laser fluence. The growth mechanism of these films is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 41
Copyright
Copyright © Materials Research Society 1984

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References

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