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A Comparative Study of MOCVD Produced ZnO Films Doped with N, As, P and Sb

  • Gary S. Tompa (a1), S. Sun (a2), C. E. Rice (a3), L. G. Provost (a4) and D. Mentel (a5)...

ZnO thin films are of interest for an array of applications; including: light emitters, photovoltaics, sensors and transparent contacts among others. Of particular interest is the potential to produce p-type layers from which p-n junction devices could be routinely produced. While it is fairly routine for MOCVD to produce n-type films with doping concentrations in the 10E20 cm-3 range and resistivities below 10E-3 ohm-cm; it is very difficult to produce measurable p-type ZnO. We report on our efforts with doping films p-type using N gas sources and metalorganic sources of P, As, and Sb. Films showing acceptor bands by photoluminescence have been demonstrated; however reliable electrical measurements remain difficult. Specific problems include achieving low resistance ohmic contacts, accounting for the photo-responsiveness of ZnO films and sensitivity limits in Hall measurements of low-doped and compensated materials. The presentation will review deposition parameters, produced and processed films and material characteristics.

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