In this paper we present a comparison of the physical and electrical properties of high quality insulating thin films of silicon dioxide produced at low temperatures by three methods; standard plasma enhanced CVD of silane/nitrous oxide, photo enhanced CVD of silane/nitrous oxide using a novel internal nitrogen discharge lamp, and oxygen plasma anodisation.
The electrical and interface properties of the films, obtained from current-voltage and capacitance-voltage measurements are compared. The physical properties and composition of the films have been investigated by standard methods such as ellipsometry and p-etch rate, and spectroscopic techniques such as Auger, XPS, LIMA and Infrared absorption. The results of these investigations are reported.
The effects of low temperature annealing on the film properties have been examined and the suitability of each of the fabrication techniques to a variety of applications is discussed.
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