Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-24T23:48:02.478Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of the Morphological and Optical Characteristics of InP Islands on GalnP/GaAs (311)A and (100)

Published online by Cambridge University Press:  03 September 2012

R. I. Pelzel ,
C. M. Reaves ,
S. P. DenBaars  and
W. H. Weinberg
R. I. Pelzel
Affiliation:
Center for Quantized Electronic Structures, University of California, Santa Barbara, CA 93106 Department of Chemical Engineering, University of California, Santa Barbara, CA 93106
C. M. Reaves
Affiliation:
Center for Quantized Electronic Structures, University of California, Santa Barbara, CA 93106 Department of Chemical Engineering, University of California, Santa Barbara, CA 93106
S. P. DenBaars
Affiliation:
Center for Quantized Electronic Structures, University of California, Santa Barbara, CA 93106 Department of Materials, University of California, Santa Barbara, CA 93106
W. H. Weinberg
Affiliation:
Center for Quantized Electronic Structures, University of California, Santa Barbara, CA 93106 Department of Chemical Engineering, University of California, Santa Barbara, CA 93106 †chari@engineering.ucsb.edu
Get access

Abstract

We have studied the effect of surface orientation on the optical and morphological characteristics of coherently-strained InP islands grown on GaInP/GaAs. The differences between islands grown on the (100) orientation and the (311)A orientation are studied. Islands grown on the (311)A orientation are more dense than the islands grown on the (100) orientation. For the (100) orientation, the island height distribution is bimodal peaked at 20 Å and 220 Å. For the (311)A orientation, the island height distribution is also bimodal peaked at 15 Å and 60 Å. Photoluminescence measurements for the (311)A orientation show a peak at 1.9 eV attributed to small islands. This peak is shifted to higher energies in comparison to the corresponding peak for the (100) orientation which is at 1.77 eV. This peak shift is due to the fact that the small islands on the (311)A orientation are smaller than the corresponding islands on the (100) orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 187
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Weisbuch, C., and Vinter, B., Quantum Semiconductor Structures. Academic Press, Inc., San Diego, CA, 1991, pp. 191–1943 and references therein.Google Scholar
2 Eaglesham, D., and Cerullo, M., Phys. Rev. Lett. 64, p. 1943 (1990).Google Scholar
3 Nötzel, R., Semiconductor Sci. and Technol. 11, p. 1365 (1996) and references therein.Google Scholar
4 Solomon, G.S., Trezza, J.A., and Harris, J.S. Jr., Appl. Phys. Lett. 66, p. 991 (1995).Google Scholar
5 Leonard, D., Krishnamurthy, M., Fafard, S., Merz, J.L., and Petroff, P.M., J. Vac. Sci. and Technol. B 12, p. 1063 (1994).Google Scholar
6 Sopanen, M., Lipsanen, H., and Ahopelto, J., Appl. Phys. Lett. 67, p. 3768 (1995).Google Scholar
7 Bressler-Hill, V., Reaves, C.M., Varma, S., DenBaars, S.P., and Weinberg, W.H., Surf. Sci.. 341 p. 29 (1995).Google Scholar
8 Reaves, C.M., Bressler-Hill, V., Weinberg, W.H., and DenBaars, S.P., J. Electron. Mater.. 24, p. 1605 (1995).Google Scholar
9 Temmyo, J., Kozen, A., Tamamura, T., Nötzel, R., Fukui, T., and Haasegawa, H., J. Electron. Mater. 25, p. 431 (1996).Google Scholar
10 Nötzel, R., Temmyo, J., and Tamamura, T., Nature 369, p. 131 (1994).Google Scholar
11 Reaves, C.M., Bressler-Hill, V., Varma, S., Weinberg, W.H., and DenBaars, S.P., Surf. Sci. 326, p. 209 (1995).Google Scholar
12 Reaves, C.M., Cevallos, N.A., Hsueh, G.C., Cheng, Y.M., Weinberg, W.H., Petroff, P.M., and DenBaars, S.P., Seventh International Conference on Indium Phosphide and Related Materials (New York, IEEE, 1995) pp. 307–10.Google Scholar
13 Carlsson, N., Seifert, W., Petersson, A., Castrillo, P., Pistol, M.E., and Samuelson, L., Appl. Phys. Lett. 65, p. 3093 (1994).Google Scholar
14 Reaves, CM., Pelzel, R.I., Hsueh, G.C., Weinberg, W.H., and DenBaars, S.P., Appl. Phys. Lett., in press.Google Scholar
15 Libyshev, D.I., Gonzalez-Borrero, P.P., Marega, E. Jr., Petitprez, E., and Basmaji, P., J. Vac. Sci. Tech. B 14, p. 2212 (1996).Google Scholar