Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-23T06:56:42.542Z Has data issue: false hasContentIssue false
  • English
  • Français

Compound Semiconductor Applications for Automotive Sensors

Published online by Cambridge University Press:  10 February 2011

M. W. Pelczynski ,
J. J. Heremans  and
S. Schwed
M. W. Pelczynski
Affiliation:
EMCORE Corporation, Somerset, NJ
J. J. Heremans
Affiliation:
EMCORE Corporation, Somerset, NJ
S. Schwed
Affiliation:
EMCORE Corporation, Somerset, NJ
Get access

Abstract

Compound semiconductors find extensive application as magnetic position sensors in the automotive environment. Typical applications involve the sensor element, a permanent magnet attached to the sensor, and a moving magnetic circuit -a target wheel. Wider mechanical gaps in the magnetic circuit can be utilized with a sensor of higher sensitivity, and thus high sensitivity is valuable. Further limitations on the choice of materials are imposed by temperature sensitivity, as the automotive environment is characterized by wide temperature operating ranges (-40°C up to 200°C). The magnetic signal may be hidden by the temperature drift in the sensor output, andthus temperature stability limits the sensor's resolution. Automotive position sensors find use in ignition timing and misfire detection (cam and crank sensors), as wheel speed sensors (anti-lock brakes and other types of active wheel-control), in brushless electric motors and several other applications. This work reviews progress achieved to refine the use of InSb for automotive sensing applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 65
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Popović, R. S., Hall Effect Devices(Adam Hilger, Bristol, 1991); Sens. Act. A 56, 39 (1996).Google Scholar
2) Wieder, H. H., Hall Generators and Magnetoresistors(Pion Ltd. London, 1971) pp. 17–47.Google Scholar
3) Vaes, H. M. J. and Kleinpenning, T. G. M., J. Appl. Phys. 48, 5131 (1977).Google Scholar
4) Popović, R. S. and Hölg, B., Solid State Electronics 31, 1681 (1988); H. Blanchard, C. de Raad Iseli and R. S. Popovi6, Sens. Act. A 60, 10 (1997).Google Scholar
5) Behet, M., Das, J., Boeck, J. De and Borghs, G., IEEE Trans. Magn. 34, 1300 (1998).Google Scholar
6) Lee, J. S., Ahn, K.-H., Jeong, Y.-H. and Kim, D. M., Sens. Act A 57, 183 (1996).Google Scholar
7) Heremans, J., J. Phys. D: Appl. Phys. 26, 1149 (1993).Google Scholar
8) Pauw, L. J. van der, Philips Res. Repts. 13, 1 (1958).Google Scholar
9) Heremans, J. P., Mater. Res. Soc. Proc. 475, 63 (1997).Google Scholar
10) Shin, J., Hsu, Y., Hsu, T. C. and Stringfellow, G. B., J. Elec. Mat. 24, 1563 (1995).Google Scholar
11) Partin, D. L., Pelczynski, M., Cooke, P., Green, L., Heremans, J. and Thrush, C. M., J. Cryst. Growth 195, 378 (1998).Google Scholar
12) Partin, D. L., Heremans, J. and Thrush, C. M., Sens. Act. A 69, 39 (1998).Google Scholar
13) Zawadzki, W. and Szymanska, W., J. Phys. Chem. Solids 32, 1151 (1971).Google Scholar
14) Partin, D. L., Heremans, J. and Thrush, C. M., J. Vac. Sci. Technol B 17, 1267 (1998).Google Scholar
15) Compound Semiconductor 4, pp. 4–5 (1998).Google Scholar