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Contactless Electromodulation Characterization of Compound Semiconductor Surfaces and Device Structures

Published online by Cambridge University Press:  22 February 2011

J.M. Woodall
J.M. Woodall*
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907-1285 USA
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Abstract

This paper will review the use of contactless electromodulation methods, such as photoreflectance (PR) and contactless electroreflectance (CER), to characterize the electronic properties of compound semiconductor surfaces exposed to different growth and post-growth conditions. Also the characterization of properties critical to device performance can be evaluated. For example, using PR and CER it has been found that there is a lower density of surface hole traps than electron traps in certain as-grown MBE (001) GaAs samples and that this condition persists even after air exposure. This behaviour is in contrast to other samples, including both bulk and MBE grown (001) surfaces in which the Fermi level is pinned mid-gap for both n- and p-type structures. We also have observed that Ar+ bombardment under UHV conditions results in Fermi level pinning close to the conduction band edge and that thermal annealing restores mid-gap pinning. Finally, using PR we are able to characterize the electric fields and associated doping levels in the emitter and collector regions of heterojunction bipolar transistor structures (fabricated from III-V materials), thus demonstrating the ability to perform inprocess evaluation of important device parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 141
Copyright
Copyright © Materials Research Society 1994

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