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Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 Fornation

Published online by Cambridge University Press:  28 February 2011

K. Nauka ,
Jun Amano ,
M.P. Scott ,
E.R. Weber ,
J.E. Turner  and
R. Tsai
K. Nauka
Affiliation:
Hewlett Packard Laboratories, Palo Alto, CA 94304
Jun Amano
Affiliation:
Hewlett Packard Laboratories, Palo Alto, CA 94304
M.P. Scott
Affiliation:
Hewlett Packard Laboratories, Palo Alto, CA 94304
E.R. Weber
Affiliation:
UC Berkeley, Berkeley, CA 94720
J.E. Turner
Affiliation:
Hewlett Packard Laboratories, Palo Alto, CA 94304
R. Tsai
Affiliation:
Hewlett Packard IC Division, Ft.Collins, CO 80525
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Abstract

Deep level transient spectroscopy (DLTS) in conjunction with other analytical techniques was used to establish a correlation between the leakage current in the TiSi2/p+/n-Si shallow diodes (0.25 micron) and the Ti-related Ec - 0.23 eV deep trap. It was found that Ti diffused into the junction region durin the TiSi2 formation and caused leakage currents with values up to 2 × 10−8 A/cm2. Further increases of the leakage current were related to the formation of a TiSi2/n-Si Schottky barrier.

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References

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