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The Creation and Annealing of Heavy Ion Damage in Silicon

Published online by Cambridge University Press:  25 February 2011

L. M. Howe  and
M. H. Rainville
L. M. Howe
Affiliation:
Atomic Energy of Canada Research Company Limited Chalk River Nuclear Laboratories Chalk River, Ontario, Canada KOJ 1JO
M. H. Rainville
Affiliation:
Atomic Energy of Canada Research Company Limited Chalk River Nuclear Laboratories Chalk River, Ontario, Canada KOJ 1JO
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Abstract

High resolution transmission electron microscopy techniques have been used to obtain information on the contrast, spatial distribution, size and annealing behaviour of the damaged regions produced within individual collision cascades by heavy ion (As, Sb and Bi) bombardment (10–120 KeV) of silicon with 1.0 × 1011 – 6.0 × 1011 ions cm−2. The fraction of the theoretical cascade volume occupied by a heavily damaged region steadily increased as the average deposited energy density within the cascade increased. At high energy densities, the visible damage produced in the main cascade consisted of a single, isolated damaged region. With decreasing values of (i.e. increasing ion implant energies), there was an increasing tendency for multiple damaged regions to be produced within the main cascade.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 79
Copyright
Copyright © Materials Research Society 1987

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References

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