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Current–Voltage Characteristics of Porous Silicon Made from A P/N Junction Structure

Published online by Cambridge University Press:  15 February 2011

Y. J. Hsu ,
L. K. Samanta ,
K. C. Wang ,
P. C. Chen  and
H. L. Hwang
Y. J. Hsu
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC
L. K. Samanta
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC
K. C. Wang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC
P. C. Chen
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC
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Abstract

We have made studies on the TRANSVERSE transport properties of the porous Si made from a novel P/N junction structure. The structures of porous Si were examined for various electrochemical etching conditions and they were correlated with the electrical data. The junciton was fabricated by shallow diffusion, with porous Si formed perpendicular to the junction and between two indium ohmic contacts. This structure confines currents to the direction parallel to the surface. Distinct feature on I–V curves have been observed, including sudden rise of currents and the existence of negative differential resistances (NDR). The characteristics appeared stable and depended on the polarity of bias. Suggestions are made that the porous Si could be composed of microcrystals, and feasibility of carrier transport through quantum boxes responsible for the electrical behaviors are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 95
Copyright
Copyright © Materials Research Society 1992

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References

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