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DC and AC Gate-Bias Stability of Nanocrystalline Silicon Thin-Film Transistors Made on Colorless Polyimide Foil Substrates

  • I-Chung Chiu (a1), I-Chun Cheng (a1) (a2), Jian Z. Chen (a3), Jung-Jie Huang (a4) and Yung-Pei Chen (a5)...

Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) were demonstrated on flexible colorless polyimide substrates. The dc and ac bias-stress stability of these TFTs were investigated with and without mechanical tensile stress applied in parallel to the current flow direction. The findings indicate that the threshold voltage shift caused by an ac gate-bias stress was smaller compared to that caused by a dc gate-bias stress. Frequency dependence of threshold voltage shift was pronounced in the negative gate-bias stress experiments. Compared to TFTs under pure electrical gate-bias stressing, the stability of the nc-Si:H TFTs degrades further when the mechanical tensile strain is applied together with an electrical gate-bias stress.

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