Skip to main content
×
×
Home

DC and AC Gate-Bias Stability of Nanocrystalline Silicon Thin-Film Transistors Made on Colorless Polyimide Foil Substrates

  • I-Chung Chiu (a1), I-Chun Cheng (a1) (a2), Jian Z. Chen (a3), Jung-Jie Huang (a4) and Yung-Pei Chen (a5)...
Abstract

Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) were demonstrated on flexible colorless polyimide substrates. The dc and ac bias-stress stability of these TFTs were investigated with and without mechanical tensile stress applied in parallel to the current flow direction. The findings indicate that the threshold voltage shift caused by an ac gate-bias stress was smaller compared to that caused by a dc gate-bias stress. Frequency dependence of threshold voltage shift was pronounced in the negative gate-bias stress experiments. Compared to TFTs under pure electrical gate-bias stressing, the stability of the nc-Si:H TFTs degrades further when the mechanical tensile strain is applied together with an electrical gate-bias stress.

Copyright
Corresponding author
*Corresponding author: ichuncheng@cc.ee.ntu.edu.tw
References
Hide All
1.Gleskova, H. and Wagner, S., IEEE Electron Device Lett., 20, 473475 (1999).
2.Long, K., Kattamis, A. Z., Cheng, I-C., Gleskova, H., Wagner, S., and Sturm, J. C., IEEE Electron Device Lett., 27, 111113 (2006).
3.Cheon, J. H., Lee, W. G., Lim, T. H., and Jang, J., Electrochem. and Solid-State Lett., 12, 2528 (2009).
4.Cheng, I-C. and Wagner, S., Appl. Phys. Lett., 80, 440442 (2002).
5.Lee, C. H., Sazonov, A., and Nathan, A., Appl. Phys. Lett., 86, 222106–1-3 (2005).
6.Kattamis, A.Z., Holmes, R.J., Cheng, I-Chun; Long, K., Sturm, J.C., Forrest, S.R., Wagner, S., IEEE Electron Device Lett., 27, 49-51 (2006).
7.Chen, Y. and Wagner, S., Appl. Phys. Lett., 75, 11251127 (1999).
8.Beck, N., Meier, J., Fric, J., Remeš, Z., Poruba, A., Flückiger, R., Pohl, J., Shah, A. and Vaněček, M., J. Non-Cryst. Solids, 198200, 903906 (1996).
9.Orpella, A., Voz, C., Puigdollers, J., Dosev, D., Fonrodona, M., Soler, D., Bertomeu, J., Asensi, J.M, Andreu, J. and Alcubilla, R., Thin Solid Films, 395, 335338 (2001).
10.Kanicki, J. and Martin, S., “Thin Film Transistors,” Kagan, C. R. and Andry, P., Eds. (New York: Marccel Dekker, 2003) pp. 71138.
11.Gleskova, H., Hsu, P. I., Xi, Z., Sturm, J. C., Suo, Z., and Wagner, S., Journal of Non-Crystalline Solids, 338340, 732735 (2004).
12.Won, S. H., Chung, J. K., Lee, C. B., Nam, H. C., Hur, J. H., and Jang, J., J. Electrochem. Soc., 151, G167G170 (2004).
13.Kaneko, Y., Sasano, A., and Tsukada, T., J. Appl. Phys., 69, 73017305 (1991).
14.Hekmatshoar, B., Cherenack, K. H., Wagner, S. and, Sturm, J. C., Digest of 2008 International Electron Devices Meeting, 89–91 (2008).
15.Chen, J. Z., Cheng, I-C., Wagner, S, Jackson, W., Perlov, C., and Taussig, C., Proc. Mater. Res. Soc., 989, 0989-A09-04 (2007).
16.Chiang, C. S., Kanicki, J. and Takechi, K., Japanese Journal of Applied Physics, 37, 47044710 (1998).
17.Huang, C. Y., Teng, T. H., Tsai, J. W. and Cheng, H. C., Japanese Journal of Applied Physics, 39, 38673871 (2000).
18.Oritsuki, R., Horii, T., Sasano, A., Tsutsui, K., Koizumi, T., Kaneko, Y. and Tsukada, T., Japanese Journal of Applied Physics, 30, 37193723 (1991).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed