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Defect-Induced Photoluminescence from Pulsed Laser Annealed Si

Published online by Cambridge University Press:  15 February 2011

M S Skolnick ,
A G Cullis  and
H C Webber
M S Skolnick
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcestershire, UK.
A G Cullis
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcestershire, UK.
H C Webber
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcestershire, UK.
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Abstract

Low temperature photoluminescence is used to study damage centers in ion implanted, pulsed laser annealed Si. A number of intense, damage related photoluminescence lines W, G and 13 are observed. It is shown that most of the W (and 13) centers are created by solid phase annealing of implant damage beyond the laser melted region. Peak G, on the other hand, is present in the tail of the implant damage before laser annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 185
Copyright
Copyright © Materials Research Society 1981

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References

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