Skip to main content

Deposition of Titanium Oxide Films from Metal-Organic Precursor by Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition

  • Atsushi Nagahori (a1) and Rishi Raj (a1)

Titanium oxide thin films were deposited at room temperature by the Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition (ECR-PACVD) method. Effects of deposition temperature, microwave power and plasma gas pressure were investigated. Both Ar and O2 plasma were used to deposit films from titanium isopropoxide (Ti(OC3H7)4) precursor. Transparent titanium oxide films were obtained with O2 plasma. Refractive index and thickness were measured by ellipsometry and the films were characterized by x-ray diffraction.

Hide All
1. Ono, T., Oda, M., Takahashi, C. and Matsuo, S., J. Vac. Sci. Technol. B 4, 696 (1986).
2. Asmussen, J., J. Vac. Sci. Technol. A 7, 883 (1989).
3. Hu, Y. Z., Li, M., Simko, J., Andrews, J. and Irene, E. A., in CVD-XI, proceedings of the 11 th international conference on Chemical Vapor Deposition, 1990, edited by Spear, K. E. and Cullen, G. W. (Electrochemical Society, Pennington, NJ, 1990), pp. 166172.
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *


Full text views

Total number of HTML views: 0
Total number of PDF views: 3 *
Loading metrics...

Abstract views

Total abstract views: 44 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 23rd July 2018. This data will be updated every 24 hours.