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Deposition of Zinc Selenide by Atomic Layer Epitaxy for Multilayer X-Ray Optics

Published online by Cambridge University Press:  21 February 2011

J.K. Shurtleff ,
D.D. Allred ,
R.T. Perkins  and
J.M. Thorne
J.K. Shurtleff
Affiliation:
Center for X-ray Imaging, Brigham Young University, Provo, Utah, 84602
D.D. Allred
Affiliation:
Center for X-ray Imaging, Brigham Young University, Provo, Utah, 84602
R.T. Perkins
Affiliation:
Center for X-ray Imaging, Brigham Young University, Provo, Utah, 84602
J.M. Thorne
Affiliation:
Center for X-ray Imaging, Brigham Young University, Provo, Utah, 84602
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Abstract

Thin film deposition techniques currently being used to produce multilayer x-ray optics (MXOs) have difficulty producing smooth, uniform multilayers with d-spacings less than about twelve angstroms. We are investigating atomic layer epitaxy (ALE) as an alternative to these techniques.

ALE is a chemical vapor deposition technique which deposits an atomic layer of material during each cycle of the deposition process. The thickness of a film deposited by ALE depends only on the number of cycles. Multilayers deposited by ALE should be smooth and uniform with precise d-spacings which makes ALE an excellent technique for producing multilayer x-ray optics.

We have designed and built an ALE system and we have used this system to deposit ZnSe using diethyl zinc and hydrogen selenide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 109
Copyright
Copyright © Materials Research Society 1990

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References

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