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Development of a Novel Metal Epitaxy Method towards Ni Based Electro-magnetic Hybrid Systems

Published online by Cambridge University Press:  01 February 2011

Akifumi Matsuda ,
Masayasu Kasahara ,
Takahiro Watanabe ,
Wakana Hara ,
Sei Otaka ,
Kouji Koyama  and
Mamoru Yoshimoto
Akifumi Matsuda
Affiliation:
matsuda.a.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, 4259-R3-6 Nagatsuta, Midori, Yokohama, Kanagawa, 226-8503, Japan, +81-45-924-5331, +81-45-924-5365
Masayasu Kasahara
Affiliation:
kasahara.m.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, 4259-R3-6 Nagatsuta, Midori, Yokohama, 226-8503, Japan
Takahiro Watanabe
Affiliation:
watanabe.t.al@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, 4259-R3-6 Nagatsuta, Midori, Yokohama, 226-8503, Japan
Wakana Hara
Affiliation:
hara.w.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, 4259-R3-6 Nagatsuta, Midori, Yokohama, 226-8503, Japan
Sei Otaka
Affiliation:
otaka.s.ac@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, 4259-R3-6 Nagatsuta, Midori, Yokohama, 226-8503, Japan
Kouji Koyama
Affiliation:
k-koyama@namiki.co.jp, Namiki Precision Jewel Co., Ltd., Crystal Growth Laboratory, 3-8-22 Shinden, Adachi, Tokyo, 123-8511, Japan
Mamoru Yoshimoto
Affiliation:
yoshimoto.m.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, 4259-R3-6 Nagatsuta, Midori, Yokohama, 226-8503, Japan
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Abstract

The epitaxial Ni (111) thin film on the oxide substrate could be obtained by a novel epitaxy method, employing pulsed laser deposition (PLD) of NiO (111) epitaxial film on the sapphire (α-Al2O3 single crystal) substrate and successive hydrogen reduction of NiO. The NiO (111) epitaxial film was deposited on the sapphire (0001) substrate at room-temperature by PLD, and then reduced into the Ni epitaxial film by annealing (300 °C to 500 °C) in the hydrogen-atmosphere. On the other hand, the polycrystalline Ni metal thin film was obtained by reduction of the polycrystalline NiO film, indicating necessity of epitaxial growth for the precursor oxide thin film in the metal epitaxy. The present epitaxy method suggests the possible formation of [Ni/α-Al2O3] epitaxial multilayer via selective reduction of oxide multilayer.

Keywords

epitaxylaser ablationNi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 962: Symposium P – Nanoscale Magnets – Synthesis, Self-Assembly, Properties and Applications , 2006 , 0962-P09-04
Copyright
Copyright © Materials Research Society 2007

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