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Development of Earth-abundant CZTS Thin Film Solar Cells with Sulfurization Technique

Published online by Cambridge University Press:  08 September 2014

Hironori Katagiri
Affiliation:
Nagaoka National College of Technology, 888 Nishikatakai, Nagaoka, 940-8532, Japan JST-CREST, 888 Nishikatakai, Nagaoka, 940-8532, Japan
Kazuo Jimbo
Affiliation:
Nagaoka National College of Technology, 888 Nishikatakai, Nagaoka, 940-8532, Japan
Tsukasa Washio
Affiliation:
Nagaoka National College of Technology, 888 Nishikatakai, Nagaoka, 940-8532, Japan JST-CREST, 888 Nishikatakai, Nagaoka, 940-8532, Japan
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Abstract

Cu2ZnSnS4 (henceforth CZTS) absorber layers are successfully synthesized by a sulfurization technique of physical vapor deposited precursors. In our previous report, we have clarified that the off-stoichiometry composition of Cu-poor and Zn-rich is desirable to achieve high conversion efficiency. By using CZTS compound target that provide such active composition, we could conduct a simple single sputtering method to prepare CZTS absorber. In our laboratory, a two-stage process of precursor preparation followed by sulfurization is a major fabrication method from the start of this study. We think that this method is suitable for a mass production. An optimization of the sulfurization process is a quite important issue because the active composition was already revealed. In this paper, TG/DTA system available in the H2S atmosphere is introduced to optimize the sulfurization condition. As a result, bump-free CZTS films were prepared successfully and the fluctuation of J-V properties in one substrate was drastically suppressed.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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