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Dielectric Charging in Low Temperature Silicon Nitride for RF-MEMS Capacitive Switches

Published online by Cambridge University Press:  01 February 2011

Richard Daigler ,
George Papaioannou ,
Eleni Papandreou  and
John Papapolymerou
Richard Daigler
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA, 30332
George Papaioannou
Affiliation:
gpapaioan@phys.uoa.gr, University of Athens, Physics, Solid State Physics Section, Panepistimiopolis, Zografos, Athens, 15784, Greece, +302107276817 or +302107276722, +302107276711
Eleni Papandreou
Affiliation:
elpapand@yahoo.gr, University of Athens, Physics, Solid State Physis Section, Panepistimiopolis - Zografos, Athens, 15784, Greece
John Papapolymerou
Affiliation:
papapol@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Drive NW, Atlanta, GA, 30332, United States
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Abstract

The paper presents a systematic investigation of dielectric charging in low temperature silicon nitride for RF-MEMS capacitive switches. The investigation takes includes both the effect of dielectric film thickness as well as the effect of metal contacts. The investigation demonstrates that the charging process is asymmetric. It is shown that the amount of stored charge depends significantly on the dielectric film thickness, which is caused from the contribution of the space charge polarization mechanism. Finally, the results are compared with those of higher temperature silicon nitride.

Keywords

dielectric propertiesmicroelectro-mechanical (MEMS)nitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1075: Symposium J – Passive and Electromechanical Materials and Integration , 2008 , 1075-J05-05
Copyright
Copyright © Materials Research Society 2008

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