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Diffusion of Boron in Germanium and Si1-xGex (x>50%) alloys Suresh Uppal

  • A.F.W. Willoughby (a1), J.M. Bonar (a2), N.E.B. Cowern (a3), R.J.H. Morris (a3) and M. Bollani (a4)...

Boron diffusion in germanium and relaxed Si1-xGex alloys with Ge content x>50% is reported. Relaxed SiGe layers were grown by LEPECVD and boron was introduced using ion implantation. Samples were given equal thermal budgets using furnace annealing. Diffusivity values of boron have been extracted. The results confirm that diffusion of boron in germanium is indeed slower than that reported in literature. The diffusivity of boron was found to increase gradually for x>50% at 900°C but the increase is not substantial. We found that pairing model is not sufficient to explain boron diffusivity behavior in SiGe alloys over the entire range of germanium content. The results suggest that an interstitial mediation of boron diffusion in germanium should be considered.

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[1] Lee, M.L., Leitz, C.W., Cheng, Z., Pitera, A.J., Langdo, T., Currie, M.T., Taraschi, G., Fitzgerald, E.A., Appl. Phys. Lett., 79, 3344 (2001).
[2] Kuo, P., Hoyt, J.L., Gibbons, J.F., Turner, J.E., and Lefforge, D. in Strained Layer Epitaxy-Material, Processing, and Device Applications, edited by Fitzgerald, Eugene A., Hoyt, Judy, Cheng, Keh-Yung, and Bean, John, (Mater. Res. Soc. Symo. Proc. 395, Pittsburgh, PA, 1995) pp. 373378.
[3] Uppal, Suresh, Willoughby, Arthur F. W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard, and Dowsett, Mark G., Journal of Applied Physics, 90, 4293 (2001) and Physica B, 308-310, 525 (2001).
[4] Rosenblad, C., Kummer, M., Dommann, A., Müller, E., Gusso, M., Tapfer, L., and Käanel, H. von, Material Science and Engineering, B74, 113 (2000).
[5] Meer, W. and Pommerrenig, D., Z. Angew. Phys., 23, 369 (1967).
[6] Dunlap, W. C. Jr, Phys. Rev., 94, 1531 (1954).
[7] People, R., IEEE Journal of Quantum Electronics, 22, 1696 (1986).
[8] Zangenberg, N., Ph.D. Thesis, University of Aarhus, Denmark.
[9] Bonar, J.M., Willoughby, A.F.W., Dan, A.H., Mcgregor, B.M., Lerch, W., Loeffelmacher, D., Cooke, G.A., and Dowsett, M.G., J. Material Science: Materials in Electronics, 12, 219 (2001).
[10] Fang, Tilden T., Fang, Wingra T. C., Griffin, Peter B., and Plummer, James D., Appl. Phys. Lett., 68, 791 (1996).
[11] Frank, W., Gösele, U., Mehrer, H. and Seeger, A., in Diffusion in Crystalline Solids, edited by Murch, G.E. and Nowich, A.S. (Academic Press, London, 1984) pp. 63142.
[12] Eguchi, S., Hoyt, J.L., Leitz, C.W., and Fitzgerald, E.A., Appl. Phys. Lett., 80, 1743 (2002).
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