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  • Cited by 7
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    This article has been cited by the following publications. This list is generated based on data provided by CrossRef.

    Sosnin, E. A. 2012. Areas in which vacuum ultraviolet excilamps are used (Review). Journal of Optical Technology, Vol. 79, Issue. 10, p. 659.

    Sosnin, Edward A. Oppenländer, Thomas and Tarasenko, Victor F. 2006. Applications of capacitive and barrier discharge excilamps in photoscience. Journal of Photochemistry and Photobiology C: Photochemistry Reviews, Vol. 7, Issue. 4, p. 145.

    Kogelschatz, U Esrom, H Zhang, J.-Y and Boyd, I.W 2000. High-intensity sources of incoherent UV and VUV excimer radiation for low-temperature materials processing. Applied Surface Science, Vol. 168, Issue. 1-4, p. 29.

    Manfredotti, C. Fizzotti, F. Boero, M. and Piatti, G. 1993. A novel VUV photochemical deposition apparatus. Applied Surface Science, Vol. 69, Issue. 1-4, p. 127.

    Kessler, F. and Bauer, G.H. 1992. VUV excimer light source for deposition of amorphous semiconductors. Applied Surface Science, Vol. 54, p. 430.

    Kogelschatz, Ulrich 1992. Silent-discharge driven excimer UV sources and their applications. Applied Surface Science, Vol. 54, p. 410.

    Manfredotti, C. Fizzotti, F. Osenga, C. Boero, M. Rigato, V. and Quaranta, A. 1992. A Particular Photo-CVD Apparatus for Hydrogenated Amorphous Silicon Deposition. MRS Proceedings, Vol. 258,


Direct a-Si:H Photo-CVD Deposition with the Excimer Spectra of a Dielectric-Barrier Discharge Lamp

  • F. Kessler (a1), H.-D. Mohring (a1) and G.H. Bauer (a1)
  • DOI:
  • Published online: 01 February 2011

A vacuum UV-photo-CVD reactor for direct decomposition of Si2H6, SiH4, GeH4, and B2H6 for a-Si:H, a-Ge:H, and a-SiGe:H deposition has been operated with a large area dielectric-barrier discharge lamp emitting excimer radiation of Xe (7.3eV), Kr (8.6eV), or Ar (9.8eV).

It is shown that the deposition process (Si2H6 or GeH4 at 0.5 mbar) is governed by the diffusion of long-lifetime radicals.

High quality undoped and p-type doped a-Si:H has been deposited from Si2H6 and B2H6 with the Xe lamp spectrum (σph/σ≈106 at Eg=1.9eV) and film growth rates of up to 5 nm/min have been achieved.

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