Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-24T19:25:32.344Z Has data issue: false hasContentIssue false
  • English
  • Français

Dislocation-Related Etch Protrusions Formed on 4H-SiC (000-1) Surfaces by Molten KOH Etching

Published online by Cambridge University Press:  01 February 2011

Masahide Gotoh ,
Takeshi Tawara ,
Shun-ichi Nakamura ,
Tae Tamori ,
Yoshiyuki Kuboki ,
Yoshiyuki Yonezawa  and
Masaharu Nishiura
Masahide Gotoh
Affiliation:
gotoh-masahide@fujielectric.co.jp, Fuji Electric Advanced Technology Co., Ltd., Device Technology Laboratory, 4-18-1, Tsukama, Matsumoto, Nagano, 390-0821, Japan, +81-263-27-7429, +81-263-28-5573
Takeshi Tawara
Affiliation:
tawara-takeshi@fujielectric.co.jp, Fuji Electric Advanced Technology, Device Technology Laboratory, 4-18-1, Tsukama, Matsumoto, Nagano, 390-0821, Japan
Shun-ichi Nakamura
Affiliation:
nakamura-shunichi@fujielectric.co.jp, Fuji Electric Advanced Technology, Device Technology Laboratory, 4-18-1, Tsukama, Matsumoto, Nagano, 390-0821, Japan
Tae Tamori
Affiliation:
tamori-tae@fujielectric.co.jp, Fuji Electric Advanced Technology, Material and Science Laboratory, 1, Fuji-machi, Hino, Tokyo, 191-8502, Japan
Yoshiyuki Kuboki
Affiliation:
kuboki-yoshiyuki@fujielectric.co.jp, Fuji Electric Advanced Technology, Material and Science Laboratory, 1, Fuji-machi, Hino, Tokyo, 191-8502, Japan
Yoshiyuki Yonezawa
Affiliation:
yonezawa-yoshiyuki@fujielectric.co.jp, Fuji Electric Advanced Technology, Device Technology Laboratory, 4-18-1, Tsukama, Matsumoto, Nagano, 390-0821, Japan
Masaharu Nishiura
Affiliation:
nishiura-masaharu@fujielectric.co.jp, Fuji Electric Advanced Technology, Device Technology Laboratory, 4-18-1, Tsukama, Matsumoto, Nagano, 390-0821, Japan
Get access

Abstract

In this study, we investigated surface features formed by molten KOH etching of (000-1) substrates and epilayers, using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). We found the surface features formed on (000-1) are protrusions, in contrast to well-known dimples on (0001).

Keywords

dislocationsscanning electron microscopy (SEM)transmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B05-22
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Fukuda, K., Kato, M., Kojima, K., and Senzaki, J., Appl. Phys. Lett. 84 (2004), 2088.Google Scholar
2 Nakayama, K., Sugawara, Y., Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T., Asano, K., and Ishii, R., Mat. Sci. Forum 483–485 (2005), 969.Google Scholar
3 Neudeck, P. G., Huang, W., and Dudley, M., IEEE Trans. Electron Devices 46 (1999), 478.Google Scholar
4 Wahab, Q., Ellison, A., Henry, A., Janzén, E., Hallin, C., Persio, J. Di, and Martinez, R., Appl. Phys. Lett. 76 (2000), 2725.Google Scholar
5 Ha, S., Vetter, W. M., Dudley, M., and Skowronski, M., Mat. Sci. Forum 389–393 (2002), 443.Google Scholar
6 Bondokov, R. T., Khlebnikov, I. I., Lashkov, T., Tupitsyn, E., Stratiy, G., Khelebnikov, Y., and Sudarshan, T. S., Jpn. J. Appl. Phys. 41 (2002), 7312.Google Scholar
7 Katsuno, M., Ohtani, N., Takahashi, J., Yashiro, H., and Kanaya, M., Jpn. J. Appl. Phys. 38 (1999), 4661.Google Scholar