A large negative resistance is observed in the I-V characteristics of gold nanogap junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, this junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage.
Email your librarian or administrator to recommend adding this journal to your organisation's collection.
Altmetric attention score
Full text views
* Views captured on Cambridge Core between September 2016 - 24th March 2017. This data will be updated every 24 hours.