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Photoluminescence within Crystalline-Si/SiO2 Single Quantum Wells.

Published online by Cambridge University Press:  11 February 2011

D. J. Lockwood ,
M. W. C. Dharma-wardana ,
Z. H. Lu ,
D. H. Grozea ,
P. Carrier  and
Laurent J. Lewis
D. J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada
M. W. C. Dharma-wardana
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada
Z. H. Lu
Affiliation:
Department of Materials Science and Engineering, University of Toronto, Toronto, M5S 3E4, Canada
D. H. Grozea
Affiliation:
Department of Materials Science and Engineering, University of Toronto, Toronto, M5S 3E4, Canada
P. Carrier
Affiliation:
Département de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces (GCM), Université de Montréal, Case Postale 6128, Succursale Centre-Ville, Montréal, Québec, H3C 3J7, Canada
Laurent J. Lewis
Affiliation:
Département de Physique et Groupe de Recherche en Physique et Technologie des Couches Minces (GCM), Université de Montréal, Case Postale 6128, Succursale Centre-Ville, Montréal, Québec, H3C 3J7, Canada
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Abstract

Ultrathin single quantum wells of crystalline silicon (c-Si) confined by SiO2 have been prepared by chemical and thermal processing of silicon-on-insulator wafers. The photoluminescence (PL) produced by these nanometer-thick single wells contains two bands: one exhibits a peak energy of ∼1.8 eV, while the second increases rapidly in peak energy with decreasing c-Si layer thickness. Comparison with theories based on self-consistent first-principles calculations shows that the increase in PL peak energy of the second band is consistent with that predicted for the c-Si energy gap of such wells. It also agrees with the measured band gap variation. The ∼1.8 eV PL band is attributed to the recombination of electron-hole pairs confined at the c-Si/SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F1.1
Copyright
Copyright © Materials Research Society 2003

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References

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