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Photoluminescence within Crystalline-Si/SiO2 Single Quantum Wells.

  • D. J. Lockwood (a1), M. W. C. Dharma-wardana (a1), Z. H. Lu (a2), D. H. Grozea (a2), P. Carrier (a3) and Laurent J. Lewis (a3)...
Abstract
ABSTRACT

Ultrathin single quantum wells of crystalline silicon (c-Si) confined by SiO2 have been prepared by chemical and thermal processing of silicon-on-insulator wafers. The photoluminescence (PL) produced by these nanometer-thick single wells contains two bands: one exhibits a peak energy of ∼1.8 eV, while the second increases rapidly in peak energy with decreasing c-Si layer thickness. Comparison with theories based on self-consistent first-principles calculations shows that the increase in PL peak energy of the second band is consistent with that predicted for the c-Si energy gap of such wells. It also agrees with the measured band gap variation. The ∼1.8 eV PL band is attributed to the recombination of electron-hole pairs confined at the c-Si/SiO2 interface.

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