Skip to main content
    • Aa
    • Aa

Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO2 and HfO2 in Contact with Si and SiO2

  • Maciej Gutowski (a1) (a2), John E. Jaffe (a1), Chun-Li Liu (a3), Matt Stoker (a3), Rama I. Hegde (a4), Raghaw S. Rai (a4) and Philip J. Tobin (a4)...

We present experimental results regarding the thermodynamic stability of the high-k dielectrics ZrO2 and HfO2 in contact with Si and SiO2. The HfO2/Si interface is found to be stable with respect to formation of silicides whereas the ZrO2/Si interface is not. The metal oxide/SiO2 interface is marginally unstable with respect to formation of silicates. Cross-sectional transmission electron micrographs expose formation of nodules, identified as silicides, across the polysilicon/ZrO2/Si interfaces but not for the interfaces with HfO2. For both ZrO2 and HfO2, the X-ray photoemission spectra illustrate formation of silicate-like compounds in the MO2/SiO2 interface.

Linked references
Hide All

This list contains references from the content that can be linked to their source. For a full set of references and notes please see the PDF or HTML where available.

2G. D. Wilk , R. M. Wallace , and J. M. Anthony , J. Appl. Phys. 89, 5243 (2001) and references therein.

3K. J. Hubbard , D. G. Schlom , J. of Mater. Res. 11, 2757 (1996) and references therein.

4F.A. Cotton , G. Wilkinson , C.A. Murillo , M. Bochmann , Advanced Inorganic Chemistry, John Wiley & Sons, Inc., New York, 2000.

7M. Copel , M. Gribelyuk , E. Gusev , Appl. Phys. Lett. 76, 436 (2000).

Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *