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Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO2 and HfO2 in Contact with Si and SiO2

  • Maciej Gutowski (a1) (a2), John E. Jaffe (a1), Chun-Li Liu (a3), Matt Stoker (a3), Rama I. Hegde (a4), Raghaw S. Rai (a4) and Philip J. Tobin (a4)...
Abstract
Abstract

We present experimental results regarding the thermodynamic stability of the high-k dielectrics ZrO2 and HfO2 in contact with Si and SiO2. The HfO2/Si interface is found to be stable with respect to formation of silicides whereas the ZrO2/Si interface is not. The metal oxide/SiO2 interface is marginally unstable with respect to formation of silicates. Cross-sectional transmission electron micrographs expose formation of nodules, identified as silicides, across the polysilicon/ZrO2/Si interfaces but not for the interfaces with HfO2. For both ZrO2 and HfO2, the X-ray photoemission spectra illustrate formation of silicate-like compounds in the MO2/SiO2 interface.

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This list contains references from the content that can be linked to their source. For a full set of references and notes please see the PDF or HTML where available.

2G. D. Wilk , R. M. Wallace , and J. M. Anthony , J. Appl. Phys. 89, 5243 (2001) and references therein.

3K. J. Hubbard , D. G. Schlom , J. of Mater. Res. 11, 2757 (1996) and references therein.

4F.A. Cotton , G. Wilkinson , C.A. Murillo , M. Bochmann , Advanced Inorganic Chemistry, John Wiley & Sons, Inc., New York, 2000.

7M. Copel , M. Gribelyuk , E. Gusev , Appl. Phys. Lett. 76, 436 (2000).

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  • ISSN: -
  • EISSN: 1946-4274
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