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Dlts Ciiaracterizati oh of Precipitation Induced Microdefects

Published online by Cambridge University Press:  28 February 2011

F.D. Whitwer ,
H. Haddad  and
L. Forbes
F.D. Whitwer
Affiliation:
Dept. of Electrical Engineering, Oregon State University Corvallis, OR 97331
H. Haddad
Affiliation:
Hewlett-Packard, Corvallis, OR 97330
L. Forbes
Affiliation:
Dept. of Electrical Engineering, Oregon State University Corvallis, OR 97331
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Abstract

Capacitance DLTS measurements have been performed on heavily precipitated n— and p—type silicon wafers. The results indicate heavy metal gettering with a mid-bandgap deep level (0.55eV) for n—type silicon. The results for p—type siliconshow a band of states present in the lower half of the bandgap. This band of states correlates well to the band of allowed energies found in heavily dislocated p—type silicon.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 53
Copyright
Copyright © Materials Research Society 1986

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References

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