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Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled Heterostructures

Published online by Cambridge University Press:  01 February 2011

Hughes H. Silvestri
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Ian D. Sharp
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Hartmut A. Bracht
Affiliation:
Institut für Materialphysik, Universität Münster, Germany
Sam P. Nicols
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Jeff W. Beeman
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
John Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Denmark
Arne Nylandsted-Larsen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Denmark
Eugene E. Haller
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

We present experimental results of dopant- and self-diffusion in extrinsic silicon doped with As. Multilayers of isotopically controlled 28Si and natural silicon enable simultaneous analysis of 30Si diffusion into the 28Si enriched layers and dopant diffusion throughout the multilayer structure. In order to suppress transient enhanced self- and dopant diffusion caused by ion implantation, we adopted a special approach to dopant introduction. First, an amorphous 250-nm thick Si layer was deposited on top of the Si isotope heterostructure. Then the dopant ions were implanted to a depth such that all the radiation damage resided inside this amorphous cap layer. These samples were annealed for various times and temperatures to study the impact of As diffusion and doping on Si self-diffusion. The Si self-diffusion coefficient and the dopant diffusivity for various extrinsic n-type conditions were determined over a wide temperature range. We observed increased diffusivities that we attribute to the increase in the concentration of the native defect promoting the diffusion.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1. Packan, P.A., MRS Bulletin 25 (6) 18 (2000).Google Scholar
2. Fahey, P.M., Griffin, P.B., and Plummer, J.D., Reviews of Modern Physics, 61 289 (1989).Google Scholar
3. Shockley, W. and Moll, J.L., Phys. Rev. 119 1480 (1960).Google Scholar
4. Bracht, H., Haller, E.E., and Clarke-Phelps, R., Phys. Rev. Lett. 81 393 (1998).Google Scholar
5. Ural, A., Griffin, P.B., and Plummer, J.D., Phys. Rev. Lett. 83 3454 (1999).Google Scholar
6. Uematsu, M., J. Appl. Phys. 82 2228 (1997).Google Scholar
7. Eaglesham, D.J., Stolk, P.A., Gossmann, H.-J., Poate, J.M., Appl. Phys. Lett. 65(18) 2305 (1994).Google Scholar
8. Kelly, P.J., Car, R., Phys. Rev. B 45 6543 (1992).Google Scholar
9. Masters, B.J. and Fairfield, J.M., J. Appl. Phys. 40 2390 (1969).Google Scholar
10. Nakabayashi, Y., Osman, H.I., Segawa, T., Saito, K., Matsumoto, S., Murota, J., Wada, K., Abe, T., Jpn. J. Appl. Phys. 40 L181 (2001).Google Scholar
11. Ural, A., Griffin, P.B., and Plummer, J.D., Appl. Phys. Lett. 79 4328 (2001).Google Scholar
12. Morin, F.J. and Maita, J.P., Phys. Rev. 96 28 (1954).Google Scholar
13. Sharp, I.D., et al., (these proceedings).Google Scholar