Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-24T14:15:32.581Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Ambient Gas Pressure on Pulsed Laser Ablation Plume Dynamics and Znte Film Growth

Published online by Cambridge University Press:  15 February 2011

CM. Rouleau ,
D.H. Lowndes ,
M.A. Strauss ,
S. Cao ,
A.J. Pedraza ,
D.B. Geohegan ,
A.A. Puretzky  and
L.F. Allard
CM. Rouleau
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D.H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
M.A. Strauss
Affiliation:
Dept. of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37992.
S. Cao
Affiliation:
Dept. of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37992.
A.J. Pedraza
Affiliation:
Dept. of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37992.
D.B. Geohegan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
A.A. Puretzky
Affiliation:
Institute of Spectroscopy, Troitsk, Russia
L.F. Allard
Affiliation:
High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Get access

Abstract

Epitaxial thin films of nitrogen-doped p-ZnTe were grown on single-crystal, semi-insulating GaAs substrates via pulsed laser ablation of a stoichiometric ZnTe target. Both low pressure nitrogen ambients and high vacuum were used. Results of in situ reflection high energy electron diffraction (RHEED) and time-resolved ion probe measurements have been compared with ex situ Hall effect and transmission electron microscopy (TEM) measurements. A strong correlation was observed between the nature of the film's surface during growth (2-D vs. 3-D, assessed via RHEED) and the ambient gas pressures employed during deposition. The extended defect content (assessed via cross-sectional TEM) in the region >150 nm from the film/substrate interface was found to increase with the ambient gas pressure during deposition, which could not be explained by lattice mismatch alone. At sufficiently high pressures, misoriented, columnar grains developed which were not only consistent with the RHEED observations but also were correlated with a marked decrease in Hall mobility and a slight decrease in hole concentration. Ion probe measurements, which monitored the attenuation and slowing of the ion current arriving at the substrate surface, indicated that for increasing nitrogen pressure the fast (vacuum) velocity-distribution splits into a distinct fast and two collisionally-slowed components or modes. Gas-controlled variations in these components mirrored trends in electrical properties and microstructural measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 119
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Roy, D. and Krupanidhi, S.B., J. Mater. Res. 7, 2521 (1992).Google Scholar
2 Kim, H.S. and Kwok, H.S., Appl. Phys. Lett. 61, 2234 (1992).Google Scholar
3 Casero, R. P., Kerherve, F., Enard, J.P. and Perrière, J., Applied Surface Science 54, 147 (1992).Google Scholar
4 Foote, M.C., Jones, B.B., Hunt, B.D., Banier, J.B., Vasquez, R.P. and Bajuk, L.J., Physica C 201, 176 (1992).Google Scholar
5 Lee, J., Narumi, E., Li, C., Patel, S. and Shaw, D.T., Physica C 200, 235 (1992).Google Scholar
6 Shen, W.P and Kwok, H.S., in Compound Semiconductor Epitaxy MRS symposium proceedings V340, edited by Tu, C.W., Kolodziejski, L.A. and McCrary, V.R., (MRS, Pittsburgh, PA, 1994), p 457.Google Scholar
7 McCamy, J.W. and Lowndes, D.H., Appl. Phys. Lett. 63, 3008 (1993).Google Scholar
8 Chem, M.Y., Lin, H.M., Fang, C.C., Fan, J.C. and Chen, Y.F., Appl. Phys. Lett. 67, 1390 (1995).Google Scholar
9 Shen, W.P. and Kwok, H.S., Appl. Phys. Lett. 65, 2162 (1994).Google Scholar
10 Rouleau, CM., Lowndes, D.H., McCamy, J.W.. Budai, J.D., Poker, D.B., Geohegan, D.B., Puretzky, A.A. and Zhu, S., Appl. Phys. Lett. 67, 2545 (1995).Google Scholar
11 Shen, W.P. and Kwok, H.S., in Film Synthesis and Growth Using Energetic Beams MRS symposium proceedings V388, edited by Atwater, H.A., Dickinson, J.T., Lowndes, D.H. and Polman, A., (MRS, Pittsburgh, PA 1995), p 91.Google Scholar
12 Lowndes, D.H., Rouleau, CM., McCamy, J.W., Budai, J.D., Poker, D.B., Geohegan, D.B., Puretzky, A.A. and Zhu, S., in Film Synthesis and Growth Using Energetic Beams MRS symposium proceedings V388, edited by Atwater, H.A., Dickinson, J.T., Lowndes, D.H. and Polman, A., (MRS, Pittsburgh, PA, 1995), p. 85.Google Scholar
13 Uchiki, H., Machida, O., Tanaka, A. and Hirasawa, H., Jpn. J. Appl. Phys. 32, L764 (1993).Google Scholar
14 Ahmed, E., Hill, A.E., Leppavuori, J., Pilkington, R.D., Tomlinson, R.D., Levoska, J. and Kusmartseva, O., Adv. Materials for Optics and Elect. 4, 423 (1994).Google Scholar
15 Schaffler, R., Klose, M., Brieger, M., Dittrich, H. and Schock, H.W., Materials Sci. Forum 173–174, 135 (1995).Google Scholar
16 Levoska, J., Hill, A.E., Leppavuori, S., Kusmartseva, O., Tomlinson, R.D. and Pilkington, R.D., Jpn. J. Appl. Phys. 32, 43 (193).Google Scholar
17 Gremenok, V.F., Zaretskava, E.P., Bodnar, I.V. and Victorov, I.A., Jpn. J. Appl. Phys. 32, 90 (1993).Google Scholar
18 Levoska, J., Leppavuori, S., Wang, F., Kusmartseva, O., Hill, A.E., Ahmed, E., Tomlinson, R.D. and Pilkington, R.D., Physica Scripta T54, 244 (1994).Google Scholar
19 Hill, A.E., Leppavuori, S., Tomlinson, R.D., Pilkington, R.D., Levoska, J., Ahmed, E., Frantti, J., in Laser Ablation in Materials Processing: Fundamentals and Applications MRS symposium proceedings V285, edited by Braren, B., Dubowski, J.J. and Norton, D.P., (MRS, Pittsburgh, PA 1993), p. 483.Google Scholar
20 Uchiki, H., Hirasawa, H. and Hasegawa, I., Jpn. J. Appl. Phys. 33, L983 (1994).Google Scholar
21 Feiler, D. and Williams, R. S., Appl. Phys. Lett., submitted for publication.Google Scholar
22 Feiler, D., Williams, R.S., Talin, A.A., Yoon, H. and Goorsky, M.S., J. Cryst. Growth, submitted for publication.Google Scholar
23 Lowndes, D.H., Rouleau, CM., Geohegan, D.B., Puretzky, A.A., Strauss, M.A., Pedraza, A.J., Park, J.W., Budai, J.D. and Poker, D.B., Pulsed Laser Ablation Growth and Doping of Epitaxial Compound Semiconductor Films, these proceedings.Google Scholar
24 Geohegan, D.B., in Laser Ablation: Mechanisms and Applications, edited by Miller, J.C. and Haglund, R.F., (Springer-Verlag, Heodelberg, 1991), p. 28.Google Scholar
25 Geohegan, D.B., in Pulsed Laser Deposition of Thin Films, edited by Chrisley, D.B. and Hubler, G.K., (Wiley, New York, 1994), chap 5.Google Scholar
26 Geohegan, D.B., Thin Solid Films 220, 138 (1992).Google Scholar
27 Geohegan, D.B., in Laser Ablation of Electronic Materials: Basic Mechanisms and Applications, edited by Fogarassy, E. and Lazare, S., (North Holland, Amsterdam, 1992), p. 73.Google Scholar