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Effect of Corrosion Inhibitor (BTA) in Citric Acid based Slurry on Cu CMP

Published online by Cambridge University Press:  01 February 2011

In-Kwon Kim
Affiliation:
Div. of Materials and Chemical Engineering, Hanyang University, Ansan, 426-791, Korea
Young-Jae Kang
Affiliation:
Div. of Materials and Chemical Engineering, Hanyang University, Ansan, 426-791, Korea
Yi-Koan Hong
Affiliation:
Div. of Materials and Chemical Engineering, Hanyang University, Ansan, 426-791, Korea
Jin-Goo Park
Affiliation:
Div. of Materials and Chemical Engineering, Hanyang University, Ansan, 426-791, Korea
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Abstract

In this study, the effect of BTA on polishing behavior was investigated as functions of H2O2, slurry pH and abrasive particles. The addition of BTA effectively prevented Cu from etching by forming the passivation layer of Cu-BTA regardless of pH and H2O2 concentration in slurry. A thinner passivation layer was grown on Cu in BTA added slurry solutions with a higher contact angle of 60°. The dynamic etch rate, the removal rate with abrasive free slurry, also decreased when BTA was added in slurry at pH 2, 4 and 6. The removal rate of Cu was strongly dependent on types of abrasive particles in slurry. The larger hardness of slurry abrasive particles, the higher removal rates of Cu. The reduction of removal rates in BTA added slurry was determined by the competition between chemical dissolution rate and mechanical abrasion rate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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