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Effect of Glow Discharge Current on Composition of Y‐Ba‐Cu‐0 Films by High Pressure Dc Sputtering Process

Published online by Cambridge University Press:  28 February 2011

R.J. Lin ,
Y.C. Chen  and
P.T. Wu
R.J. Lin
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, 195 Chung‐hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C.
Y.C. Chen
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, 195 Chung‐hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C.
P.T. Wu
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, 195 Chung‐hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C.
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Abstract

The Y‐Ba‐Cu‐0 (YBCO) films were grown on (100)Mg0 substrate by the high pressure DC diode sputtering process. The targets were YBCO compounds made by solid‐state reaction. The sputtering gas was Ar‐50%02, and total pressure was 1.5 torr. As‐deposited superconducting YBCO films can be prepared at low substrate temperature at high discharge current. For Y1Ba2Cu30x target, the atomic ratio Ba/Y in the films almost remains constant (Ba/Y = 1.7) and Cu content monotonically increases with increasing discharge current. The Cu content in the film approaches to that of the target at low discharge current. Concentrations of 0 and 02+ in plasma markedly increase during increase of discharge current. High Cu content at large discharge current may be caused by action of electrical field on Ba+ and Y+.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 635
Copyright
Copyright © Materials Research Society 1990

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